Method for manufacturing sound boundary wave apparatus, and sound boundary wave apparatus
A manufacturing method and interface wave technology, applied in semiconductor devices, electrical components, impedance networks, etc., can solve problems such as moisture intrusion, and achieve excellent environmental resistance characteristics.
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[0051] Hereinafter, the present invention will be clarified by describing specific embodiments of the present invention with reference to the drawings.
[0052] refer to Figure 1 ~ Figure 1 5. A method of manufacturing the boundary acoustic wave device according to the first embodiment of the present invention will be described.
[0053] first, prepare figure 2 The boundary acoustic wave element 10 is shown. The boundary acoustic wave element 10 has a structure in which a first dielectric layer 11 and a second dielectric layer 12 are laminated. In this embodiment, the first intermediary layer 11 is made of LiNbO 3 Piezoelectric single crystal substrates such as single crystal substrates. In addition, the first medium 11 may be formed of a piezoelectric material other than a piezoelectric single crystal.
[0054] In this embodiment, the second medium 12 is made of SiO 2 film formation, but the second medium 12 can also be made of SiO 2 Other dielectrics or insulators. ...
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