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NOR flash device and method for fabricating the device

A flash memory and intermetal dielectric technology, applied in the field of NOR flash memory devices, can solve the problem of high resistance

Inactive Publication Date: 2010-09-29
DONGBU HITEK CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the wire material of the conventional NOR flash memory device is composed of aluminum, there is a problem that the resistance is too high

Method used

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  • NOR flash device and method for fabricating the device
  • NOR flash device and method for fabricating the device
  • NOR flash device and method for fabricating the device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] Hereinafter, a structure of a NOR flash memory device according to an embodiment and a method of manufacturing the same will be described with reference to the accompanying drawings.

[0030] example figure 2 As shown in , in a NOR flash memory device having a back end of line (BEOL) structure according to an embodiment, the BEOL structure may include a substrate 10, a first intermetal dielectric 14, a first metal line 16, a second intermetal dielectric 18, The first contact portion 20 and the second metal wire 22 . More specifically, the substrate 10 may have a conductive region 12 . First intermetal dielectric 14 may be formed on and / or over substrate 10 , and first metal line 16 may be formed extending through first intermetal dielectric 14 on and / or over substrate 10 including conductive region 12 . Second intermetal dielectric 18 may be formed on and / or over first metal line 16 and first intermetal dielectric 14 . A first contact 20 may be formed extending thr...

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Abstract

An NOR flash memory device having a back end of line (BEOL) structure, the BEOL structure including a substrate having a conductive region, a first intermetal dielectric layer formed on the substrate, a first metal line formed on the conductive region, a second intermetal dielectric layer formed on the first metal line and the first inter metal dielectric, a first contact extending through the second intermetal dielectric layer, and a second metal line connected to the first metal line through the first contact. At least one of the first contact and the first and second metal lines is composed of copper and at least one of the first and second intermetal dielectric layers is composed of a low diectrice material. The use of copper metal lines and intermetal dielectric layers composed of a low-k (k=3.0) material makes it possible to improve 40% or more in the time constant delay.

Description

[0001] This application claims priority under 35 U.S.C. §119 to Korean Patent Application No. 10-2007-0062806 (filed Jun. 26, 2007), the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to NOR flash devices such as 90nm class, and more particularly to back end of line (BEOL) structures in NOR flash devices and methods for manufacturing the devices. Background technique [0003] In order to meet the requirements of thinness, high integration, high speed, and Ultra Large Scale Integration (ULSI), new technologies are more needed on flash memory devices. The intermetal dielectric (IMD) material, and even the technology to form it in NOR flash memory devices, is an important factor in enhancing device performance. First, delay times depending on various materials will be described below. [0004] example figure 1 is a graph showing delay times depending on various materials, in which the horizontal axis repre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/522H01L23/532H01L21/768H10B69/00
CPCH01L23/53295H01L23/53214H01L21/31612H01L23/5222H01L27/11517H01L23/53228H01L27/115H01L27/11568H01L23/5329H01L2924/0002H01L21/02126H01L21/02153H01L21/022H10B41/00H10B69/00H10B43/30H01L2924/00H01L21/02107H01L21/76877H01L21/02362
Inventor 朱星中
Owner DONGBU HITEK CO LTD