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Apparatus and method for processing substrate

A technology for processing substrates and equipment, applied in the process of producing decorative surface effects, decorative arts, gaseous chemical plating, etc., can solve problems such as reduction of purging time, and achieve the effect of small exhaust valves and pipelines

Active Publication Date: 2010-11-03
AVIZA TECHNOLOGY INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] There is currently no way to reduce the purge time as short as the exposure time, and in other optimized processes the time spent (unproductively) purging the chamber accounts for approximately 75% of the total cycle time

Method used

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  • Apparatus and method for processing substrate
  • Apparatus and method for processing substrate
  • Apparatus and method for processing substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0039] The substrate handling system is in figure 1 The whole is shown with 1. A substrate 2 is placed on a piston 3, which is shown in a loading position 3a and a processing position 3b. The substrates are loaded through a port 4 which also has a door 5 if required. The loading area 7a and / or the entire chamber 7 can be evacuated by means of a vacuum exhaust line 6 connected to a pump (not shown), which can provide evacuation on the underside of the piston 3 when the piston 3 is in its processing position 3b ( The piston effectively valves off the vacuum exhaust line 6) from the processing volume 7b.

[0040] A schematically shown linear drive mechanism (eg crank) 8 lifts the piston and substrate in the chamber so that the chamber's processing volume 7b is defined with very weak gas conduction between the piston and the chamber walls. The linear drive mechanism then moves the piston up and down at the programmed speed and distance, gas or vapor enters the chamber through t...

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PUM

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Abstract

A substrate processing system (1) is disclosed. A substrate (2) lies upon a piston (3) shown in both the loading position (3a) and in a processing position (3b). The substrate is loaded via a port (4) through a door (5). The loading area (7a), and / or the hole chamber (7) may be pumped out via a vacuum exhaust pipe (6) connected to a pump (not shown). A linear drive mechanism shown diagrammatically at (8) lifts the piston and the substrate in the chamber such that a process volume (7b) of the chamber is defined with poor gas conduction between the piston and the walls of the chamber.

Description

technical field [0001] The invention describes an apparatus for depositing thin layers of substances on and / or removing thin layers of substances from substrates, such as silicon wafers. Many previous deposition and etch processes utilized discrete steps for etching to form thin films or deep structures. These steps are preferably performed in one processing chamber (batch or single wafer). Background technique [0002] For example, atomic layer deposition (ALD also known as atomic layer epitaxy) is a chemical vapor deposition process in which self-contained surface reactions ultimately produce a conformal coating. For thin films with high dielectric constant (K) such as HfO 2 or alumina) ALD and similar processes, there is a growing need to improve equipment productivity. For ALD such as aluminum oxide layers containing aluminum such as trimethylaluminum Al(CH 3 ) 3 The reactive gas is first introduced into the chamber containing the substrate so that a monolayer of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455H01L21/00
CPCC23C16/45589C23C16/455C23C16/45544H01L21/67207H01L21/6719B44C1/227H01L21/20H01L21/306
Inventor C·D·M·布兰彻J·迈克内尔R·K·特罗韦尔
Owner AVIZA TECHNOLOGY INC