Magnetic random access memory and operation method thereof

A technology of random access memory and magnetic storage, which is applied in the field of memory and can solve problems such as data errors

Inactive Publication Date: 2009-03-04
IND TECH RES INST
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  • Abstract
  • Description
  • Claims
  • Application Information

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[0006] the above figure 2 The magnetic free layer 104c is a si

Method used

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  • Magnetic random access memory and operation method thereof
  • Magnetic random access memory and operation method thereof
  • Magnetic random access memory and operation method thereof

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Embodiment Construction

[0068] In order to increase the operating speed more efficiently, the inventors have proposed another structure of a WiggleCell storage device. image 3 A schematic diagram of the structure of the magnetic storage unit used according to the embodiment of the present invention is shown. refer to image 3 , the magnetic memory cell structure 190 , which only shows part of the basic structure, wherein a magnetic pinned stack 210 including the lower pinned layer 192 has a magnetization vector 208 . Another upper pinned layer 196 has a magnetization vector 206 . A magnetic coupling spacer layer 194 separates the lower pinned layer 192 from the upper pinned layer 196 . The magnetization vectors 208 , 206 of the lower pinned layer 192 and the upper pinned layer 196 have sufficiently strong magnetic coupling strength, so the direction of the magnetization vectors will not be changed by an external magnetic field. Also, a magnetically free stack 216 is located above the magnetically...

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Abstract

The invention discloses a magnetic random access memory which comprises at least one first direction writing current line and a plurality of second direction writing current lines which are vertically crossed with the first direction writing current line substantially, thereby forming a plurality of cross regions. A plurality of magnetic memory units are respectively positioned in the cross regions and receive a sensing magnetic field according to the time sequence. At least every two adjacent magnetic memory units are connected in series or in parallel, thereby constituting at least one memory unit. An easy axis of a free layer of each magnetic memory unit is substantially vertical to a magnetization vector of a fixed layer, and the easy axis has an included angle of about 45 degrees with the first direction writing current line. A reading bit line circuit is connected to a first endpoint of the memory unit. A reading word line circuit is connected to a second endpoint of the memory unit.

Description

technical field [0001] The present invention relates to a memory, in particular to a magnetic random access memory (Magnetic Random Access Memory, MRAM). Background technique [0002] Magnetic random access memory has the advantages of non-volatility, high density, high read and write speed, and radiation resistance. When writing data, the generally used method is to select the unit selected by the intersection of the induced magnetic field of two current lines (Write Bit Line and Write Word Line), and change the magnetic field of the magnetic unit by changing the magnetization direction of the magnetic material of the storage layer. resistance. When reading stored data, the sense amplifier provides current to the selected magnetic storage unit, and reads the resistance value of the magnetic unit to determine the digital value of the stored data. [0003] This magnetic storage unit is a stacked structure of multilayer magnetic metal materials: its structure is composed of ...

Claims

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Application Information

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IPC IPC(8): G11C16/16
Inventor 洪建中高明哲王丁勇李元仁
Owner IND TECH RES INST
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