Barium strontium titanate/zincum bismuth niobate heterogeneous structure material and preparation thereof

A technology of barium strontium titanate and zinc bismuth niobate, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of dielectric tunability and dielectric loss staying, without substantial improvement, and without sufficient potential Excavation and other problems to achieve the effect of high dielectric tunability and low dielectric loss characteristics

Inactive Publication Date: 2009-03-18
INST OF PHYSICS - CHINESE ACAD OF SCI +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most researchers have not fully exploited the potential of this composite system.
Strontium barium titanate/zinc bismuth niobate multilayer composite thin film fabricated on silicon platinum substrate, and zinc bismuth niobate/strontium barium titanate/zinc bismuth niobate sandwich structure (see Ren Wei et al., microwave dielectric tunable Barium strontium titanate/bismuth zinc niobium composite film and its preparation method, State Intellectu

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  • Barium strontium titanate/zincum bismuth niobate heterogeneous structure material and preparation thereof
  • Barium strontium titanate/zincum bismuth niobate heterogeneous structure material and preparation thereof

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Embodiment 1

[0021] In the manganese-doped strontium barium titanate / zinc bismuth niobate heterostructure material in this embodiment, there is only one period of manganese-doped strontium barium titanate / zinc bismuth niobate structure, wherein the manganese-doped strontium titanate The thickness of the barium layer is 160nm, and the doping concentration of manganese is 2at%. The thickness of the zinc-bismuth niobate layer is 40nm. The thickness ratio of the two layers is manganese-doped strontium barium titanate:zinc-bismuth niobate=4:1. Its preparation method is as follows:

[0022] First, using pulsed laser deposition technology, a 160nm-thick manganese-doped strontium barium titanate layer was deposited on a silicon-platinum substrate at 900°C; then, the substrate temperature was lowered to 650°C, Then deposit a layer of zinc bismuth niobate with a thickness of 40nm to obtain a heterogeneous structure with a period of manganese-doped strontium barium titanate / zinc bismuth niobate; In-...

Embodiment 2

[0028] The manganese-doped strontium barium titanate / zinc bismuth niobate heterostructure material in this embodiment includes two manganese-doped strontium barium titanate layers with a thickness of 300 nm, and the manganese doping concentration is 0.1 at%. There is a zinc bismuth niobate layer with a thickness of 100nm between the manganese-doped strontium barium titanate layers, and the thickness ratio is manganese doped strontium barium titanate: zinc bismuth niobate=3:1, and its preparation method is as follows:

[0029] First, using pulsed laser deposition technology, a layer of manganese-doped barium strontium titanate with a thickness of 300nm was deposited on a silicon platinum substrate at 700°C; the substrate temperature was lowered to 600°C, and a Zinc-bismuth niobate layer with a thickness of 100nm; then raise the substrate temperature back to 700°C and turn the target in situ to deposit a layer of 300nm-thick manganese-doped strontium titanate barium layer to obta...

Embodiment 3

[0031] In the manganese-doped barium strontium titanate / zinc-bismuth niobate heterostructure material in this embodiment, there are 10 cycles of manganese-doped barium strontium titanate / zinc-bismuth niobate structures, in which each layer of manganese-doped strontium titanate The thickness of barium is 40nm, the doping concentration of manganese is 6at%, the thickness of each layer of zinc bismuth niobate is 20nm, and the thickness ratio of the two layers is manganese-doped strontium barium titanate:zinc bismuth niobate=2:1. Its preparation method is as follows:

[0032] First, manganese-doped barium strontium titanate (thickness 40nm) and zinc bismuth niobate (thickness 20nm) were alternately deposited on a Pt-coated sapphire substrate at 700°C and 600°C by radio frequency magnetron sputtering deposition technology. Finally, a manganese-doped strontium barium titanate / zinc bismuth niobate heterostructure with 10 cycles was finally obtained, with a total thickness of 600nm; t...

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Abstract

The invention provides a barium strontium titanate/zinc niobate bismuth heterogeneous structural material, which comprises at least a layer of barium strontium titanate layer and at least a layer of zinc niobate bismuth layer, wherein the barium strontium titanate layer is mixed with manganese. The barium strontium titanate/zinc niobate bismuth heterogeneous structural material organically combines high dielectric adjustability of barium strontium titanate materials and low dielectric loss property of zinc niobate bismuth materials, through using the barium strontium titanate layer which is mixed with manganese and regulating the respective thickness and the grown conditions of the barium strontium titanate layer which is mixed with the manganese and the barium strontium titanate layer, a barium strontium titanate mixed with the manganese/ zinc niobate bismuth heterogeneous structural material with the high dielectric adjustability and the low dielectric loss property is obtained at the same time.

Description

technical field [0001] The invention relates to a heterostructure material and a preparation method thereof, in particular to a dielectrically adjustable strontium barium titanate / zinc bismuth niobate heterostructure material and a preparation method thereof. Background technique [0002] Dielectric tunable thin film materials, especially barium strontium titanate (Ba 1-x Sr x TiO 3 , BST-x) and zinc bismuth niobate ((Bi 1.5 Zn 0.5 )(Zn 0.5 Nb 1.5 )O 7 , BZN) has many electrical advantages (see N.Setter et al., Ferroelectric thin films: Review of materials, properties, and applications, J.Appl.Phys.100, 051606 (2006); W.Renetal., Bismuthzinc niobate pyrochlore dielectric thin films for capacitive applications, J.Appl.Phys.89, 767 (2000)), their most notable features are high modulation speed, low loss, low energy consumption, small size, light weight, easy integration, so it is expected to become the next A key material in the field of high-speed broadband wireless c...

Claims

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Application Information

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IPC IPC(8): H01B3/12H01L29/51H01L29/78H01L29/92H01L21/31H01L21/283H01L21/336H01L21/02
Inventor 符汪洋周岳亮曹玲柱汪宏
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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