The invention provides a high-performance microwave dielectric film having the structural formula of (1-x)BaTiO3-xNaNbO3, wherein the value range of x is between 0.025-0.075, the preparation consists of weighing BaCO3, TiO2, Na2CO3 and Nb2O5 powder according to the structural formula of (1-x)BaTiO3-xNaNbO3, carrying out ball grinding and drying treatment, pressing the powder into sheets with a pressure of 1-35MPa, loading the powder corresponding to sheets to be sintered into Al2O3 crucible, sealing the sheets and powder, placing the crucible into heating-furnace, elevating temperature to 800-1000 deg. C than thermal insulating 10-60 minutes, then elevating temperature again to sintering temperature, sintering for about 100-300 minutes at 1300-1650 deg. C, obtaining the corresponding ceramics, placing the corresponding ceramic sheets onto the growth chamber of the impulse deposition system, ablating the ceramics with KrF excimer pulsed laser, and depositing the spatters onto the substrates, thus preparing thin film with the thickness of 200-600nm.