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38results about How to "High dielectric tunability" patented technology

Method for preparing binary alternatively-doped BST membrane

The invention discloses a method for preparing a binary alternatively-doped BST membrane, belongs to the technical field of functional materials, and relates to a method for preparing a nanocrystalline BST membrane. The method adopts binary doping of Mn and Y, namely, carries out Mn or Y doping on an odd layer membrane and carries out Y or Mn doping on an even layer membrane; and the method adds a pre-crystallization processing step between cooling and crystallization steps. The membrane prepared by the method is smooth and compact with no crack or shrinkage cavity, and can greatly enhance the comprehensive dielectric tuning performance of the nanocrystalline BST membrane; and the obtained nanocrystalline BST membrane has a dielectric tuning rate of over 30.0 percent, a dielectric loss of less than 2.0 percent, a K factor of greater than 15.5, a high dielectric strength and a stable frequency characteristic and a temperature characteristic. The nanocrystalline BST membrane prepared by the method can be used for preparing a microwave tuning device (such as a phase shifter) instead of a ferrite and a semiconductor so as to remarkably reduce the manufacturing cost of the microwave tuning device; and furthermore, the nanocrystalline BST membrane prepared by the method is applicable for magnetic recording, pyroelectric focal plane arrays and the like.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Low-electric-field high-dielectric adjustable zirconium-doped barium ferrite and preparation method thereof

ActiveCN109626984ALow modulation electric fieldReasonable control of oxygen vacancy contentAir atmosphereControllability
The invention discloses a low-electric-field high-dielectric adjustable zirconium-doped barium ferrite and a preparation method thereof. The zirconium-doped barium ferrite ceramic is a single-phase material, and part of Fe3+in a BaFe12O19 crystal lattice is replaced by Zr4+ to form Fe2+ which is introduced by zirconium doping and coexists in a system, a stable defect dipole pair is formed betweenthe corresponding Fe2+ and the related Fe3+ in the system, and the obtained zirconium-doped barium ferrite ceramic has a high dielectric constant, high dielectric adjustability and an extremely low dielectric adjustable driving electric field on the basis of excellent magnetic performance. According to the invention, a cooperative sintering process of a sol-gel preparation method, air atmosphere and high-oxygen atmosphere is adopted, the process is simple, the controllability is strong, the preparation period is short, the cost is low, and the single-phase zirconium-doped barium ferrite ceramic material with a high dielectric tuning rate under ultra-low modulation voltage can be obtained. The zirconium-doped barium ferrite ceramic has wide application in the fields of dielectric adjustabledevices and magnetic and electric composite multifunctional devices.
Owner:ZHEJIANG UNIV

A kind of preparation method of binary alternately doped BST film

The invention discloses a method for preparing a binary alternately doped BST film, which belongs to the technical field of functional materials and relates to a method for preparing a nanocrystalline BST film. The present invention adopts Mn and Y binary doping, that is, Mn or Y doping is performed on the odd-numbered film, and Y or Mn doping is performed on the even-numbered film; at the same time, the "cooling" and "crystallization" steps increase "Pre-crystallization" processing step. The film prepared by the invention is smooth and dense, without cracks and shrinkage cavities, and can greatly improve the comprehensive dielectric tuning performance of the nanocrystalline BST film. The dielectric tuning rate of the obtained nanocrystalline BST film is greater than 30.0%, and the dielectric loss is less than 2.0%. , K factor greater than 15.0, high dielectric strength, stable frequency and temperature characteristics. The nanocrystalline BST film prepared by the present invention can replace ferrite and semiconductor for preparing microwave tuning devices (such as phase shifters), thereby significantly reducing the manufacturing cost of microwave tuning devices; in addition, the prepared nanocrystalline BST of the present invention Thin films can also be used in magnetic recording, pyroelectric focal plane arrays, etc.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Ferrite material with high dielectric constant

The invention belongs to the technical field of ferrite materials, and particularly relates to a ferrite material with a high dielectric constant, the ferrite material is a single-phase material, partof iron ions in the ferrite are replaced by titanium ions, cerium ions and zinc ions, the titanium ions exist in the form of positively charged Ti<4+> ions, the cerium ions exist in the form of positively charged Ce<4+> ions, the zinc ions exist in the form of positively charged Zn<2+> ions, and iron ions in the ferrite coexist in the form of Fe<3+> and Fe<2+> ions. The ferrite material is prepared by a sol-gel method, a specific preparation process is designed, the formation amount of Fe<2+> / Fe<3+> defect dipoles is increased on the basis of high magnetic performance, ferrite with extremelylow modulation voltage and high dielectric adjustable characteristics is obtained, and tests show that the dielectric constant epsilon is greater than or equal to 25, the ferromagnetic resonance linewidth [delta]H is less than or equal to 6 kA / m, and the dielectric loss tg[delta][epsilon] is less than or equal to 0.0005. The ferrite material has the characteristics of low cost anddielectric constant, and can be used for solving the problems of miniaturization and the like of microwave devices.
Owner:江西耀润磁电科技有限公司

A low electric field high dielectric tunable zirconium doped barium ferrite and its preparation method

ActiveCN109626984BLow modulation electric fieldReasonable control of oxygen vacancy contentAir atmospherePhysical chemistry
The invention discloses a low-electric-field high-dielectric adjustable zirconium-doped barium ferrite and a preparation method thereof. The zirconium-doped barium ferrite ceramic is a single-phase material, and part of Fe3+in a BaFe12O19 crystal lattice is replaced by Zr4+ to form Fe2+ which is introduced by zirconium doping and coexists in a system, a stable defect dipole pair is formed betweenthe corresponding Fe2+ and the related Fe3+ in the system, and the obtained zirconium-doped barium ferrite ceramic has a high dielectric constant, high dielectric adjustability and an extremely low dielectric adjustable driving electric field on the basis of excellent magnetic performance. According to the invention, a cooperative sintering process of a sol-gel preparation method, air atmosphere and high-oxygen atmosphere is adopted, the process is simple, the controllability is strong, the preparation period is short, the cost is low, and the single-phase zirconium-doped barium ferrite ceramic material with a high dielectric tuning rate under ultra-low modulation voltage can be obtained. The zirconium-doped barium ferrite ceramic has wide application in the fields of dielectric adjustabledevices and magnetic and electric composite multifunctional devices.
Owner:ZHEJIANG UNIV
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