38results about How to "Low modulation voltage" patented technology

In a semiconductor optical modulator of this invention, each quantum-well layer and each barrier layer of a quantum-well structure serving as a light absorption layer are respectively made of In1-X-YGaXAlYN (0<=X, Y<=1, 0<=X+Y<=1) AND IN1-X'-Y'GaX'AlY'N (0<=X', Y'<=1, 0<=X'+Y'<=1). An electric field is being generated in the light absorption layer by spontaneous polarization.

A distance measuring device includes a light source emitting light, and an integrated electro-optic modulator arranged such that the emitted light passes through an optical waveguide of the electro-optic modulator in a first direction before being emitted from the distance measuring device, and after being reflected from a target passes through the electro-optic modulator in a second direction which is opposite to the first direction. The forward electro-optic response of a modulating region of the electro-optic modulator is the same as the backward electro-optic response, and a center of gravity of the modulation is independent of modulation frequency.

The invention relates to a symmetric quadrupole structure non-isolating support filed emission displayer with a bus electrode as the symmetric center. The displayer comprises an upper substrate and a lower substrate and is characterized in that the upper substrate is provided with lengthwise anodic electrodes and a pectination dielectric layer consisting of a transverse connecting strip and a plurality of lengthwise working strips; the lengthwise center of each anodic electrode is provided with the bus electrode; the upper edge of each anodic electrode is lengthwise and alternatively providedwith a fluorophor layer and an anodic separating dielectric layer; two lengthwise sides of each lengthwise working strip are respectively provided with a grid electrode so as to form an interdigitated counter electrode structure with the bus electrode as the symmetric center; the lower substrate is provided with transverse cathodic electrodes and lengthwise auxiliary electrodes; the upper edge ofeach cathodic electrode is transversely and alternatively provided with a current-limited resistance layer and a cathodic protective dielectric layer; the intersecting part of each auxiliary electrode and each cathodic electrode is isolated by the cathodic protective dielectric layer; and an isolating dielectric layer is arranged between the upper substrate and the lower substrate. The filed emission displayer not only has novel structure and simple process, but also has uniform images and low modulating voltage and is stable and reliable in electron emission.

The invention discloses a double-heterojunction PIN electro-optical modulator structure. The structure comprises an N-Sub-type substrate. A SiO2 buried layer is arranged at the upper portion of the N-Sub-type substrate. A P+ trap region and an N+ trap region are arranged on the two sides of the upper portion of the SiO2 buried layer respectively, and an intrinsic N-type germanium-silicon modulation region is arranged between the P+ trap region and the N+ trap region. A first electrode is arranged at the upper portion of the P+ trap region, a second electrode is arranged at the upper portion of the N+ trap region, and the upper portion of the first electrode, the upper portion of the intrinsic N-type germanium-silicon modulation region and the upper portion of the second electrode are covered with a SiO2 covering layer. The double-heterojunction PIN electro-optical modulator structure is a PIN electro-optical modulator high in carrier injection and low in modulating power consumption, and can replace a conventional silicon-substrate PIN electro-optical modulator structure; the smaller modulating power consumption can be obtained during electro-optical modulating, the photoelectric conversion efficiency is improved, the proportion of electricity elements in photoelectric integration is decreased, and convenience is brought to smaller-size development of photoelectric integration.

The invention relates to an atomic spin procession detecting method and an atomic spin precession detecting device based on electro-optic modulation. Alkali metal atoms in a spin-exchange relaxation free state are used for sensing an external magnetic field or angular rate, thereby generating atomic spin Larmor precession. An electro-optic modulator is used for performing electro-optic modulation on detected laser. Through output light strength detection by the electro-optic modulator and demodulation of a phase-locked amplifier, output light strength and frequency doubling signal strength are obtained. Finally a signal acquisition and processing circuit measures an atomic spin precession signal, and furthermore measurement to the external magnetic field or inertia can be realized. According to the atomic spin procession detecting method and the atomic spin procession detecting device, advantages such as simple modulation, small size, high sensitivity, low temperature effect and simple operation condition in the electro-optic modulator are exerted. The atomic spin procession detecting method and the atomic spin procession detecting device have relatively high sensitivity and relatively high stability. The novel atomic spin procession detecting method is based on an atomic spin effect and can be used for industrial integration and practical application of atomic spin sensing devices in future.