Patents
Literature
Patsnap Copilot is an intelligent assistant for R&D personnel, combined with Patent DNA, to facilitate innovative research.
Patsnap Copilot

38results about How to "Low modulation voltage" patented technology

Atomic spin precession detecting method and atomic spin precession detecting device based on electro-optic modulation

The invention relates to an atomic spin procession detecting method and an atomic spin precession detecting device based on electro-optic modulation. Alkali metal atoms in a spin-exchange relaxation free state are used for sensing an external magnetic field or angular rate, thereby generating atomic spin Larmor precession. An electro-optic modulator is used for performing electro-optic modulation on detected laser. Through output light strength detection by the electro-optic modulator and demodulation of a phase-locked amplifier, output light strength and frequency doubling signal strength are obtained. Finally a signal acquisition and processing circuit measures an atomic spin precession signal, and furthermore measurement to the external magnetic field or inertia can be realized. According to the atomic spin procession detecting method and the atomic spin procession detecting device, advantages such as simple modulation, small size, high sensitivity, low temperature effect and simple operation condition in the electro-optic modulator are exerted. The atomic spin procession detecting method and the atomic spin procession detecting device have relatively high sensitivity and relatively high stability. The novel atomic spin procession detecting method is based on an atomic spin effect and can be used for industrial integration and practical application of atomic spin sensing devices in future.
Owner:BEIHANG UNIV

Resonant type fiber-optic gyroscope frequency locking device

The invention discloses a resonant type fiber-optic gyroscope frequency locking device.The resonant type fiber-optic gyroscope frequency locking device comprises a light source driving module, a narrow linewidth laser source, a Y waveguide modulator, a first modulation module, a polarization maintaining optical fiber resonant cavity, a signal demodulation detection module, a second modulation module, a digital output module and a lithium niobate straight waveguide modulator.A laser works at constant temperature and constant current and in a steady state, frequency stability is good, and frequency noise introduced by frequency modulation of the laser is effectively lowered.Different from a traditional PZT intra-cavity modulation method, no movable part is arranged in the cavity, the effective refractive index is modulated by modulating the magnitude and direction of an electric field applied to lithium niobate waveguides, equivalent cavity length modulation is achieved, and reliability is high.The modulation voltage is low, no redundish external driver is needed, the structure is simple, and the size and power consumption of a gyroscope are easily reduced.The lithium niobate waveguide modulator has a polarization function and achieves a polarization selection effect in the cavity, the intra-cavity polarization extinction ratio is increased, and noise relevant to polarization is effectively restrained.
Owner:BEIHANG UNIV

Lithium niobate-based PM-QPSK integrated light modulator and working method thereof

InactiveCN105700202ASmall process toleranceHighly integratedNon-linear opticsMultiplexerSilicon
The invention relates to a lithium niobate-based PM-QPSK integrated light modulator and a working method thereof. The lithium niobate-based PM-QPSK integrated light modulator comprises an upper electrode, a lower electrode, a lining and lithium niobate crystals, wherein a polarization demultiplexer, two IQ modulators in parallel and a polarization multiplexer are sequentially etched on the lithium niobate crystals in a light path direction; the upper electrode and the lower electrode are respectively arranged on the upper surface of the lithium niobate crystals and below the lining; the polarization demultiplexer and the polarization multiplexer are respectively a lithium niobate polarization demultiplexer based on MZI and a lithium niobate polarization multiplexer based on MZI. As the lithium niobate-based PM-QPSK integrated light modulator is provided with the lithium niobate polarization demultiplexer and the lithium niobate polarization multiplexer manufactured on a birefrigent effect of lithium niobate, the conventional method that a polarization multiplexer is manufactured on the basis of a silicon substrate is changed, a polarization demultiplexer and a polarization multiplexer based on the silicon substrate and IQ modulators are integrated on the same piece of crystal, and the allowance is far smaller than a silicon substrate process.
Owner:SHANDONG UNIV

Symmetric quadrupole structure non-isolating support filed emission displayer

The invention relates to a symmetric quadrupole structure non-isolating support filed emission displayer with a bus electrode as the symmetric center. The displayer comprises an upper substrate and a lower substrate and is characterized in that the upper substrate is provided with lengthwise anodic electrodes and a pectination dielectric layer consisting of a transverse connecting strip and a plurality of lengthwise working strips; the lengthwise center of each anodic electrode is provided with the bus electrode; the upper edge of each anodic electrode is lengthwise and alternatively providedwith a fluorophor layer and an anodic separating dielectric layer; two lengthwise sides of each lengthwise working strip are respectively provided with a grid electrode so as to form an interdigitated counter electrode structure with the bus electrode as the symmetric center; the lower substrate is provided with transverse cathodic electrodes and lengthwise auxiliary electrodes; the upper edge ofeach cathodic electrode is transversely and alternatively provided with a current-limited resistance layer and a cathodic protective dielectric layer; the intersecting part of each auxiliary electrode and each cathodic electrode is isolated by the cathodic protective dielectric layer; and an isolating dielectric layer is arranged between the upper substrate and the lower substrate. The filed emission displayer not only has novel structure and simple process, but also has uniform images and low modulating voltage and is stable and reliable in electron emission.
Owner:FUZHOU UNIV

I-shaped microstructure optical fiber electro-optical modulator based on two-dimensional material coating

The invention discloses an I-shaped microstructure optical fiber electro-optical modulator based on two-dimensional material coating. The invention belongs to the field of optical fiber devices for communication, and particularly relates to the field of optical modulation. A schematic diagram of the modulator is as shown in an abstract drawing, a common single-mode fiber cladding 3 is cut and ground to form an I-shaped structure, and the upper layer and the lower layer are respectively processed to have the same distance from a fiber core 4, so that main parts of a light field are transmitted in the fiber core; the two-dimensional material films 5 are respectively inscribed on the upper surface of the silicon substrate 1 and the upper side of the I-shaped optical fiber, and then the I-shaped optical fiber is reversely piled on the substrate; the electrodes 2 are arranged on the two sides of the silicon support 6 in a transition mode so as to provide voltage needed by modulation. Through the setting, different voltages are applied to the modulator, and the light intensity change after passing through the modulator is observed, so that parameters such as modulation depth, modulation voltage, insertion loss and the like are obtained. According to the electro-optical modulator, the insertion loss is effectively reduced through the I-shaped structure, the modulation efficiency can be improved through double-layer coating of the two-dimensional material, and the modulation voltage is reduced.
Owner:BEIJING JIAOTONG UNIV

Self-aligned graphene field emission gate structure and preparation method thereof

The invention relates to a self-aligned graphene field emission gate structure and a preparation method thereof, and belongs to the field of vacuum electronic devices. The structure comprises a substrate; insulating layers which are deposited on the substrate, and are arranged on the substrate at intervals; a grid electrode which is deposited on the insulating layers; emission conical tips which are arranged on the substrate between the insulating layers; and graphene which is flatly laid on the grid electrode. One pole of a grid voltage power supply is applied to the substrate, and the other pole of the grid voltage power supply is applied to the grid electrode, so that grid voltages of different magnitudes are applied between the substrate and the grid electrode, and further controllable etching is carried out on the graphene to form a self-aligned grid electrode hole. A very low grid voltage is applied between the substrate and the grid electrode, so that a greatly enhanced electric field can be formed at the emission conical tip, the number of emitted electrons is changed by changing the magnitude of the grid voltage, controllable etching is performed on an upper graphene layer, a self-aligned grid electrode hole is finally formed, the modulation voltage of the grid electrode is greatly reduced, and the electron transmittance is effectively improved.
Owner:ZHENGZHOU UNIV +1

Ferrite material with high dielectric constant

The invention belongs to the technical field of ferrite materials, and particularly relates to a ferrite material with a high dielectric constant, the ferrite material is a single-phase material, partof iron ions in the ferrite are replaced by titanium ions, cerium ions and zinc ions, the titanium ions exist in the form of positively charged Ti<4+> ions, the cerium ions exist in the form of positively charged Ce<4+> ions, the zinc ions exist in the form of positively charged Zn<2+> ions, and iron ions in the ferrite coexist in the form of Fe<3+> and Fe<2+> ions. The ferrite material is prepared by a sol-gel method, a specific preparation process is designed, the formation amount of Fe<2+> / Fe<3+> defect dipoles is increased on the basis of high magnetic performance, ferrite with extremelylow modulation voltage and high dielectric adjustable characteristics is obtained, and tests show that the dielectric constant epsilon is greater than or equal to 25, the ferromagnetic resonance linewidth [delta]H is less than or equal to 6 kA / m, and the dielectric loss tg[delta][epsilon] is less than or equal to 0.0005. The ferrite material has the characteristics of low cost anddielectric constant, and can be used for solving the problems of miniaturization and the like of microwave devices.
Owner:江西耀润磁电科技有限公司

Optical waveguide chip based on erbium-doped lithium niobate and mode-locked laser

PendingCN113904205AReduce modulation voltage and electrical power consumptionImprove pump efficiencyLaser detailsRadio frequencyErbium lasers
The invention discloses an optical waveguide chip based on erbium-doped lithium niobate and a mode-locked laser. The chip sequentially comprises a substrate, a silicon dioxide cladding, an erbium-doped lithium niobate film and a radio frequency electrode from bottom to top; the erbium-doped lithium niobate thin film is etched through photoetching, and a ridge-type erbium-doped lithium niobate waveguide is formed; and the radio frequency electrodes are arranged on the two sides of the erbium-doped lithium niobate waveguide in parallel. The erbium-doped lithium niobate thin film is used as the waveguide, the low-noise gain characteristic of the erbium-doped waveguide is reserved, the electro-optical characteristic of the lithium niobate waveguide is introduced, the gain and modulation requirements of the active mode-locked laser are met, and the integrated active mode-locked laser which is low in noise and continuously adjustable in repetition frequency can be achieved in cooperation with direct-current bias. The distance between electrodes is reduced through the ridge-type erbium-doped lithium niobate waveguide, the needed modulation voltage and electric power consumption are reduced, overlapping of signal light and pump light speckles can be increased through strong constraint on the signal light and the pump light speckles, and the pump efficiency is improved.
Owner:SHANGHAI JIAO TONG UNIV

Preparation method of long period waveguide grating

The invention discloses a long-period waveguide grating and a waveguide preparation method, an optical modulator and an optical modulation method. The long-period waveguide grating comprises a lithium niobate substrate (5), a cladding slab waveguide (4), a buffer layer (2), and a coplanar waveguide electrode structure. The buffer layer (2) covers the upper surface of the cladding slab waveguide (4), and the lithium niobate substrate (5) covers the lower surface of the cladding slab waveguide (4). The coplanar waveguide electrode structure includes a signal electrode (6) and ground electrodes (7, 8). The signal electrode (6) covers the middle of the upper surface of the buffer layer (2). A core layer waveguide (3) is arranged in the middle of the upper surface of the cladding slab waveguide (4) and right below the signal electrode (6). The ground electrodes (7, 8) are located on the two sides of the signal electrode (6), and are in the same plane as the signal electrode (6). In addition, the invention discloses an optical modulator of the long-period waveguide grating based on periodic domain structure lithium niobate and an optical modulation method thereof. The long-period waveguide grating has the advantages of low modulation voltage, high modulation bandwidth, easy modulation, and the like.
Owner:TIANJIN UNIV

A Double Heterojunction Pin Electro-optic Modulator Structure

InactiveCN105093569BIncrease the injection concentrationLow modulation voltageNon-linear opticsHeterojunctionElectricity
The invention discloses a double-heterojunction PIN electro-optical modulator structure. The structure comprises an N-Sub-type substrate. A SiO2 buried layer is arranged at the upper portion of the N-Sub-type substrate. A P+ trap region and an N+ trap region are arranged on the two sides of the upper portion of the SiO2 buried layer respectively, and an intrinsic N-type germanium-silicon modulation region is arranged between the P+ trap region and the N+ trap region. A first electrode is arranged at the upper portion of the P+ trap region, a second electrode is arranged at the upper portion of the N+ trap region, and the upper portion of the first electrode, the upper portion of the intrinsic N-type germanium-silicon modulation region and the upper portion of the second electrode are covered with a SiO2 covering layer. The double-heterojunction PIN electro-optical modulator structure is a PIN electro-optical modulator high in carrier injection and low in modulating power consumption, and can replace a conventional silicon-substrate PIN electro-optical modulator structure; the smaller modulating power consumption can be obtained during electro-optical modulating, the photoelectric conversion efficiency is improved, the proportion of electricity elements in photoelectric integration is decreased, and convenience is brought to smaller-size development of photoelectric integration.
Owner:XI'AN POLYTECHNIC UNIVERSITY

A method and device for detecting atomic spin precession based on electro-optical modulation

The invention relates to an atomic spin procession detecting method and an atomic spin precession detecting device based on electro-optic modulation. Alkali metal atoms in a spin-exchange relaxation free state are used for sensing an external magnetic field or angular rate, thereby generating atomic spin Larmor precession. An electro-optic modulator is used for performing electro-optic modulation on detected laser. Through output light strength detection by the electro-optic modulator and demodulation of a phase-locked amplifier, output light strength and frequency doubling signal strength are obtained. Finally a signal acquisition and processing circuit measures an atomic spin precession signal, and furthermore measurement to the external magnetic field or inertia can be realized. According to the atomic spin procession detecting method and the atomic spin procession detecting device, advantages such as simple modulation, small size, high sensitivity, low temperature effect and simple operation condition in the electro-optic modulator are exerted. The atomic spin procession detecting method and the atomic spin procession detecting device have relatively high sensitivity and relatively high stability. The novel atomic spin procession detecting method is based on an atomic spin effect and can be used for industrial integration and practical application of atomic spin sensing devices in future.
Owner:BEIHANG UNIV

A resonant fiber optic gyroscope frequency locking device

The invention discloses a resonant type fiber-optic gyroscope frequency locking device.The resonant type fiber-optic gyroscope frequency locking device comprises a light source driving module, a narrow linewidth laser source, a Y waveguide modulator, a first modulation module, a polarization maintaining optical fiber resonant cavity, a signal demodulation detection module, a second modulation module, a digital output module and a lithium niobate straight waveguide modulator.A laser works at constant temperature and constant current and in a steady state, frequency stability is good, and frequency noise introduced by frequency modulation of the laser is effectively lowered.Different from a traditional PZT intra-cavity modulation method, no movable part is arranged in the cavity, the effective refractive index is modulated by modulating the magnitude and direction of an electric field applied to lithium niobate waveguides, equivalent cavity length modulation is achieved, and reliability is high.The modulation voltage is low, no redundish external driver is needed, the structure is simple, and the size and power consumption of a gyroscope are easily reduced.The lithium niobate waveguide modulator has a polarization function and achieves a polarization selection effect in the cavity, the intra-cavity polarization extinction ratio is increased, and noise relevant to polarization is effectively restrained.
Owner:BEIHANG UNIV

A pm-qpsk integrated optical modulator based on lithium niobate and its working method

InactiveCN105700202BSmall process toleranceHighly integratedNon-linear opticsMultiplexerSilicon
The invention relates to a lithium niobate-based PM-QPSK integrated light modulator and a working method thereof. The lithium niobate-based PM-QPSK integrated light modulator comprises an upper electrode, a lower electrode, a lining and lithium niobate crystals, wherein a polarization demultiplexer, two IQ modulators in parallel and a polarization multiplexer are sequentially etched on the lithium niobate crystals in a light path direction; the upper electrode and the lower electrode are respectively arranged on the upper surface of the lithium niobate crystals and below the lining; the polarization demultiplexer and the polarization multiplexer are respectively a lithium niobate polarization demultiplexer based on MZI and a lithium niobate polarization multiplexer based on MZI. As the lithium niobate-based PM-QPSK integrated light modulator is provided with the lithium niobate polarization demultiplexer and the lithium niobate polarization multiplexer manufactured on a birefrigent effect of lithium niobate, the conventional method that a polarization multiplexer is manufactured on the basis of a silicon substrate is changed, a polarization demultiplexer and a polarization multiplexer based on the silicon substrate and IQ modulators are integrated on the same piece of crystal, and the allowance is far smaller than a silicon substrate process.
Owner:SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products