A Double Heterojunction Pin Electro-optic Modulator Structure

Abstract

The invention discloses a double-heterojunction PIN electro-optical modulator structure. The structure comprises an N-Sub-type substrate. A SiO2 buried layer is arranged at the upper portion of the N-Sub-type substrate. A P+ trap region and an N+ trap region are arranged on the two sides of the upper portion of the SiO2 buried layer respectively, and an intrinsic N-type germanium-silicon modulation region is arranged between the P+ trap region and the N+ trap region. A first electrode is arranged at the upper portion of the P+ trap region, a second electrode is arranged at the upper portion of the N+ trap region, and the upper portion of the first electrode, the upper portion of the intrinsic N-type germanium-silicon modulation region and the upper portion of the second electrode are covered with a SiO2 covering layer. The double-heterojunction PIN electro-optical modulator structure is a PIN electro-optical modulator high in carrier injection and low in modulating power consumption, and can replace a conventional silicon-substrate PIN electro-optical modulator structure; the smaller modulating power consumption can be obtained during electro-optical modulating, the photoelectric conversion efficiency is improved, the proportion of electricity elements in photoelectric integration is decreased, and convenience is brought to smaller-size development of photoelectric integration.

Description

technical field [0001] The invention belongs to the technical field of optoelectronic devices, in particular to a structure of a double heterojunction PIN electro-optic modulator. Background technique [0002] Silicon-based electro-optic modulator is a micro-nano modulator that uses electro-optic effect, thermo-optic effect, plasma dispersion effect and other methods to change the refractive index of optical waveguide. For existing optoelectronic devices, their cross-sectional dimensions are in the order of micrometers, and their lengths are several centimeters; due to their large size, they cannot meet the requirements of large-scale photonic integration. [0003] With the advancement of optoelectronic technology, silicon-based modulators have entered the micro-nano size. Silicon-based electro-optical modulators can transmit single-mode light waves, have the advantages of high speed, low loss and small size, and are compatible with integrated circuit manufacturing processes...

AI Technical Summary

Problems solved by technology

[0005] There are three main structures of existing silicon-based electro-optic modulators: PIN structure, PN structure and MOS capacitor structure; among them, the PIN structure has the characteristics of simple structure, high modulation efficiency, and easy process realization, so the silicon-based electro-optic modulator with this structure However, the PIN structure is a working method of DC injection, which increases the modulation power consumption of the device while modulating. How to reduce the modulation power consumption of the device has always been a silicon-based electro-optic modulator based on the PIN electrical modulation structure. issues that need resolving

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