A Double Heterojunction Pin Electro-optic Modulator Structure

An electro-optical modulator and double heterojunction technology, which is applied in the fields of instruments, optics, nonlinear optics, etc., can solve the problem of increasing the modulation power consumption of devices, and achieve the goal of reducing optical transmission loss, facilitating optoelectronic integration, and reducing modulation power consumption. Effect
CN105093569BInactive Publication Date: 2018-12-07XI'AN POLYTECHNIC UNIVERSITY
1 Cites 0 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
XI'AN POLYTECHNIC UNIVERSITY
Publication Date
2018-12-07
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention discloses a double-heterojunction PIN electro-optical modulator structure. The structure comprises an N-Sub-type substrate. A SiO2 buried layer is arranged at the upper portion of the N-Sub-type substrate. A P+ trap region and an N+ trap region are arranged on the two sides of the upper portion of the SiO2 buried layer respectively, and an intrinsic N-type germanium-silicon modulation region is arranged between the P+ trap region and the N+ trap region. A first electrode is arranged at the upper portion of the P+ trap region, a second electrode is arranged at the upper portion of the N+ trap region, and the upper portion of the first electrode, the upper portion of the intrinsic N-type germanium-silicon modulation region and the upper portion of the second electrode are covered with a SiO2 covering layer. The double-heterojunction PIN electro-optical modulator structure is a PIN electro-optical modulator high in carrier injection and low in modulating power consumption, and can replace a conventional silicon-substrate PIN electro-optical modulator structure; the smaller modulating power consumption can be obtained during electro-optical modulating, the photoelectric conversion efficiency is improved, the proportion of electricity elements in photoelectric integration is decreased, and convenience is brought to smaller-size development of photoelectric integration.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The invention belongs to the technical field of optoelectronic devices, in particular to a structure of a double heterojunction PIN electro-optic modulator. Background technique

[0002] Silicon-based electro-optic modulator is a micro-nano modulator that uses electro-optic effect, thermo-optic effect, plasma dispersion effect and other methods to change the refractive index of optical waveguide. For existing optoelectronic devices, their cross-sectional dimensions are in the order of micrometers, and their lengths are several centimeters; due to their large size, they cannot meet the requirements of large-scale photonic integration.

[0003] With the advancement of optoelectronic technology, silicon-based modulators have entered the micro-nano size. Silicon-based electro-optical modulators can transmit single-mode light waves, have the advantages of high speed, low loss and small size, and are compatible with integrated circuit manufacturing processes...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More