Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ion injection method for producing NOR FLASH chip

A technology of ion implantation and ion implantation machine, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc. It can solve the problems that the current channel cannot be guaranteed, and achieve the effect of improving yield and reducing resistance

Active Publication Date: 2010-02-24
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This set of ion implantation parameters cannot guarantee the smooth flow of current, so when AA damage occurs, the NOR FLASH chip will fail

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ion injection method for producing NOR FLASH chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] please participate figure 1 , the figure mainly introduces the flow chart of the planarization process in chip manufacturing, which mainly includes diffusion steps, photolithography steps, etching steps, ion implantation steps, film deposition steps, polishing steps, and testing and sorting steps. What the present invention improves is the ion implantation step.

[0023] The invention discloses an ion implantation method for manufacturing a NOR FLASH chip, especially an ion implantation method for a 0.18nm NOR FLASH chip. The ion implantation method includes an ion implantation step: the gas is ionized in an ion implanter with impurities such as arsenic and phosphorus to be doped, and a high voltage and a magnetic field are used to control and accelerate the ions, so that the high-energy impurity ions penetrate the rubber-coated silicon wafer s surface. In order to ensure that the current channel at the bottom of the NOR FLASH chip is unblocked in the present inventio...

Embodiment 2

[0026] In this embodiment, in the ion implantation step, the implanted arsenic ion concentration is greater than or equal to 4*10 15 Pieces / CM 2 , the speed of implanted arsenic ions is greater than or equal to 25Kev. For example, in the ion implantation step, the implanted arsenic ion concentration is 4*10 15 Pieces / CM 2 , the speed of implanted arsenic ions is 25Kev.

Embodiment 3

[0028] In this embodiment, during the ion implantation process, in the ion implantation step, the implanted arsenic ion concentration is greater than or equal to 5*10 15 Pieces / CM 2 , the speed of implanted arsenic ions is greater than or equal to 30Kev. For example, in the ion implantation step, the implanted arsenic ion concentration is 5.5*10 15 Pieces / CM 2 , the speed of implanted arsenic ions is 30Kev.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides an ion implantation method for preparing a NOR FLASH chip, the method comprises the ion implantation steps: carrying out the ionization to gas with foreign matter which is to-bemixed in an ion implantation apparatus, controlling and accelerating ion through adopting the high-voltage and the magnetic field, and enabling the foreign matter with high-energy to penetrate the surface of a glue spreading silicon chip. During the ion implantation steps of the method, the concentration of the implanted arsenic ion is more than 3*1015 particles / cm2. The method increases the number of the implanted arsenic ion through improving the implantation concentration and the implantation speed of the arsenic ion implantation, thereby the resistance of a wire is reduced, furthermore,after the resistance is reduced, a smooth channel can be naturally formed for electrical current.

Description

technical field [0001] The invention belongs to the field of chip manufacturing, and relates to a method for manufacturing a chip, in particular to a method for manufacturing a NOR FLASH chip. Background technique [0002] With the rapid development of modern social life, various electronic products have been integrated into the life of modern society one after another, bringing a lot of convenience to users. Among them, flash memory (FLASH) is an important member of the above-mentioned electronic products. The commonly used U disk, mobile phone, and digital camera all need the supporting use of flash memory to play its increasingly rich role. [0003] There are many types of flash memory, mainly including AND, NAND, NOR, DiNOR, etc. in terms of structure, among which NAND and NOR are currently the more common types. NOR flash memory (NOR FLASH) is currently the most common flash memory, which is similar to commonly used memory in terms of storage format and read and write ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265
Inventor 张艳红陆韵峰王芳
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com