Self-aligned graphene field emission gate structure and preparation method thereof
A technology of self-alignment and emission grid, which is applied in cold cathode manufacturing, electrode system manufacturing, discharge tube/lamp manufacturing, etc., can solve the problems of controllable etching of graphene layer, high current density, and electron transmittance. Low-level problems, to achieve the effect of improving electron transmittance and reducing modulation voltage
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[0055] Next, the technical solutions in the embodiments of the present invention will be described in connection with the drawings of the embodiments of the present invention, and it is understood that the described embodiments are merely the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art are in the range of the present invention without making creative labor premise.
[0056] It is an object of the present invention to provide a self-aligned grapse an alkalifuminum emitting gate structure, including a bottom-down substrate, an emitting tip, an insulating layer, a gate and graphene; a pole of the gate pressure supply At the bottom, another polar is applied to the gate, and a very large reinforcing electric field can be formed at the tip to emit a tape tip to emit electrons at the tip to apply a small gate pressure between the substrate and the ...
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