Self-aligned graphene field emission gate structure and preparation method thereof

Abstract

The invention relates to a self-aligned graphene field emission gate structure and a preparation method thereof, and belongs to the field of vacuum electronic devices. The structure comprises a substrate; insulating layers which are deposited on the substrate, and are arranged on the substrate at intervals; a grid electrode which is deposited on the insulating layers; emission conical tips which are arranged on the substrate between the insulating layers; and graphene which is flatly laid on the grid electrode. One pole of a grid voltage power supply is applied to the substrate, and the other pole of the grid voltage power supply is applied to the grid electrode, so that grid voltages of different magnitudes are applied between the substrate and the grid electrode, and further controllable etching is carried out on the graphene to form a self-aligned grid electrode hole. A very low grid voltage is applied between the substrate and the grid electrode, so that a greatly enhanced electric field can be formed at the emission conical tip, the number of emitted electrons is changed by changing the magnitude of the grid voltage, controllable etching is performed on an upper graphene layer, a self-aligned grid electrode hole is finally formed, the modulation voltage of the grid electrode is greatly reduced, and the electron transmittance is effectively improved.

Description

technical field [0001] The invention relates to the field of vacuum electronic devices, in particular to a self-aligned graphene field emission gate structure and a preparation method thereof. Background technique [0002] Due to its ultrahigh carrier mobility and saturation drift velocity, graphene has attracted extensive attention in recent years, and it is expected to be applied in the fields of high-speed electronics and radio frequency in the future. [0003] At present, there are many forms of vacuum electron emission, such as thermal electron emission, field electron emission, photoelectron emission and so on. Electron sources have very important applications in various vacuum electronic devices such as X-ray sources, flat panel displays, electron microscopes, and ion thrusters. However, the disadvantages of these electron emission cathodes are that the emission efficiency is too low and the electron transmittance is also very low. And it cannot be applied to the pro...

AI Technical Summary

Problems solved by technology

Electron sources have very important applications in various vacuum electronic devices such as X-ray sources, flat panel displays, electron microscopes, and ion thrusters. However, the disadvantages of these electron emission cathodes are that the emission efficiency is too low and the electron transmittance is also very low. And it cannot be applied to the process of controlling the etching of the graphene layer

[0004] As the core electron source of vacuum electronic devices, Spindt cathode has the advantages of instant start-up, low power consumption, room temperature operation, and high current density. It is widely used in X-ray tubes, flat-panel displays, traveling wave tubes, etc. Applying it to a process for controlled etching of graphene layers

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