Dielectric adjustable thin film based on implantation type nano line electrode and preparation thereof

A nanowire, implantable technology, applied in chemical instruments and methods, circuits, electrical components, etc., to achieve good application prospects, fewer defects, and less loss.

Inactive Publication Date: 2008-08-13
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the modulation voltage of dielectric tunable films is usually between 25 and 100V, so there is still a lot of work to be done.

Method used

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  • Dielectric adjustable thin film based on implantation type nano line electrode and preparation thereof
  • Dielectric adjustable thin film based on implantation type nano line electrode and preparation thereof
  • Dielectric adjustable thin film based on implantation type nano line electrode and preparation thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] 1) According to the chemical formula Pb x Sr 1-x TiO 3 , x=0.4, take powdered strontium carbonate, lead oxide and titanium dioxide, in which the lead oxide is over 0.02% mol to compensate for the volatilization loss of lead; mix by ball milling, then press the target, and sinter the target material Pb 0.4 Sr 0.6 TiO 3 ;

[0035] 2) Clean the glass substrate, and sequentially deposit Ti on the substrate by chemical vapor deposition 5 Si 3 Conductive film layer and TiSi conductive nanowire layer;

[0036] 3) Sputtering deposition of a dielectric film Pb on the titanium silicide conductive nanowire layer of the composite structure obtained in step 2) by magnetron sputtering 0.4 Sr 0.6 TiO 3 ; During sputtering, the vacuum degree of the reaction chamber was kept at 0.6Pa, with argon and oxygen as the sputtering atmosphere, the flow rates of argon and oxygen were 10sccm and 10sccm respectively, the sputtering power was 80W, and the sputtering time was 2h;

[0037] ...

Embodiment 2

[0040] 1) According to the chemical formula Pb x Sr 1-x TiO 3 , x = 0.1, take powdered strontium carbonate, lead oxide and titanium dioxide, in which the lead oxide is over 0.02% mol to compensate for the volatilization loss of lead; mix by ball milling, then press the target, and sinter the target material Pb 0.1 Sr 0.9 TiO 3 ;

[0041] 2) Clean the single crystal silicon substrate, and sequentially deposit Ti on the substrate by chemical vapor deposition 5 Si 3 conductive film layer and TiSi 2 conductive nanowire layer;

[0042] 3) Sputtering deposition of a dielectric film Pb on the titanium silicide conductive nanowire layer of the composite structure obtained in step 2) by magnetron sputtering 0.1 Sr 0.9 TiO 3 ; During sputtering, the vacuum degree of the reaction chamber was kept at 0.8Pa, with argon and oxygen as the sputtering atmosphere, the flow rates of argon and oxygen were 3sccm and 27sccm respectively, the sputtering power was 60W, and the sputtering ti...

Embodiment 3

[0046] 1) According to the chemical formula Pb x Sr 1-x TiO 3 , x=0.9, take powdered strontium carbonate, lead oxide and titanium dioxide, in which the lead oxide is over 0.02% mol to compensate for the volatilization loss of lead; mix by ball milling, then press the target, and sinter the target material Pb 0.9 Sr 0.1 TiO 3 ;

[0047] 2) Clean the polysilicon substrate, and deposit Ti sequentially on the substrate by chemical vapor deposition 5 Si 3 Conductive film layer and TiSi conductive nanowire layer;

[0048] 3) Sputtering deposition of a dielectric film Pb on the titanium silicide conductive nanowire layer of the composite structure obtained in step 2) by magnetron sputtering 0.9 Sr 0.1 TiO 3 ; During sputtering, the vacuum degree of the reaction chamber was kept at 1Pa, with argon and oxygen as the sputtering atmosphere, the flow rates of argon and oxygen were 12sccm and 45sccm respectively, the sputtering power was 90W, and the sputtering time was 2h;

[00...

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Abstract

The invention discloses a dielectric adjustable film based on an implantable nano-wire electrode. Titanium silicide conductive film layer, titanium silicide conductive nano-wire layer and dielectric medium film layer are orderly deposited on a basic board from bottom to top. The film can be prepared by magnetron sputtering deposition and sol-gel method. The dielectric adjustable film based on an implantable nano-wire electrode implants silicide conductive nano-wire into the inner of the dielectric film, makes full use of the marginal electric field of the nano-wire electrode, gets a high adjustability under a very low modulating voltage and reduces the modulating voltage of the dielectric adjustable film without nano-wire electrode, which is from 1/6 to 1/10 of in the ordinary course. The dielectric adjustable film based on an implantable nano-wire electrode of the invention has good compactness, little defects and loss. The dielectric film based on an implantable nano-wire electrode is an adjustable film with high adjustability, low loss, and high performance, thereby having a nice prospect of application.

Description

technical field [0001] The invention relates to a dielectrically adjustable film based on an implanted nanowire electrode and a preparation method thereof. Background technique [0002] Since Iijima synthesized carbon nanotubes in 1991, one-dimensional nanomaterials have become a research hotspot in nanotechnology due to their novel physical, chemical and biological properties and potential applications in nanodevices. Based on nanowires, higher device density can be achieved that cannot be achieved by ordinary semiconductor technology. Therefore, with the development of nanotechnology and the miniaturization of microelectronic devices, the preparation of nanoelectronic and optoelectronic devices based on nanowires has caused Wide attention. They will play an important role in future integrated circuits, sensors, photodetectors, flat displays, and future nanocomputers. As far as silicide nanowires are concerned, it has attracted considerable attention from the internationa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B32B9/00B32B33/00B32B17/06H01L21/28H01L29/00C23C28/04C23C16/42C23C14/35C23C14/08C23C14/58B05D1/18
Inventor 杜丕一胡安红翁文剑韩高荣赵高凌沈鸽宋晨路徐刚张溪文
Owner ZHEJIANG UNIV
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