Optical waveguide chip based on erbium-doped lithium niobate and mode-locked laser
A mode-locked laser, erbium lithium niobate technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of high electrical power consumption, high pump light power consumption, large electrode spacing, etc. Modulation of voltage and electrical power consumption, improved pumping efficiency, and low noise effects
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[0058] The lithium-doped tantal acid lithium-doped film has a thickness of 0.6 microns, and the silica clavilian thickness is 2 microns, and the thickness of the silicon material is 400 microns. Erbium-doped lithium-doped lithium acid waveguide induced depth of 300 nm. Erbium doped concentration 1 × 10 20 cm -3 . Pumped light wavelength 1480 nm. The metal electrode material is gold and thickness of 600 nm. The upper cladding is silica, thickness of 2 microns.
[0059] figure 1 The structure is shown in the present invention, figure 2 A schematic diagram of a chip cross section is given.
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