Optical waveguide chip based on erbium-doped lithium niobate and mode-locked laser
A mode-locked laser, erbium lithium niobate technology, applied in lasers, laser parts, phonon exciters, etc., can solve the problems of high electrical power consumption, high pump light power consumption, large electrode spacing, etc. Modulation of voltage and electrical power consumption, improved pumping efficiency, and low noise effects
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[0058] The thickness of the erbium-doped lithium niobate film is 0.6 microns, the thickness of the silicon dioxide cladding is 2 microns, and the thickness of the silicon substrate is 400 microns. Erbium-doped lithium niobate waveguide etching depth is 300nm. Erbium-doped concentration 1×10 20 cm -3 . The wavelength of pump light is 1480nm. The metal electrode material is gold with a thickness of 600nm. The upper cladding is silica with a thickness of 2 microns.
[0059] figure 1 A structural schematic diagram of the present invention is provided, figure 2 A schematic diagram of the chip cross-section is given.
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