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Preparation method of highly magnesium-doped strontium plumbum titanate high dielectric adjustable film material

A technology of lead strontium titanate and thin film materials is applied in the field of preparation of strontium lead titanate high dielectric tunable thin film materials, which can solve the problems of inability to form crystalline content, reduce the crystalline phase content of thin films, high PST thin films, etc. Good market prospect, improved dielectric constant, low cost effect

Inactive Publication Date: 2007-04-25
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under the experimental conditions that the content of Pb is 40%, the content of Sr is 60%, the content of Mg replacing Ti can be from 0 to 15%, and it is determined that when the doping content of Mg is 10%, the crystal phase content of the film The highest, too much Mg doping will greatly increase the defects and reduce the crystal phase content of the film. At this time, it is impossible to form a PST film with high crystal content and complete structure, that is, within the range of this low content of Mg doping Haven't gotten very good results yet

Method used

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  • Preparation method of highly magnesium-doped strontium plumbum titanate high dielectric adjustable film material
  • Preparation method of highly magnesium-doped strontium plumbum titanate high dielectric adjustable film material

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Embodiment 1

[0024] Lead acetate and strontium carbonate were dissolved in acetic acid by adding a small amount of deionized water, and the reaction was heated to obtain a colorless transparent solution; butyl titanate was dissolved in ethylene glycol methyl ether, and stirred until uniformly mixed. Mix the two solutions to obtain a Pb-Sr-Ti precursor sol, in which the concentrations of Pb, Sr, and Ti are: Pb: 0.22mol / L, Sr: 0.12mol / L, Ti: 0.35mol / L L. Immerse the glass substrate in the prepared sol system at a constant speed (4cm / min), place it for 10 seconds to make the glass substrate in a stable state, and then lift it at the same speed (4cm / min) until all the glass pieces are lifted out of the liquid surface, Then dry naturally in the air. Then put it into a high-temperature furnace, perform a rapid heat treatment at a temperature of 560° C. for 5 minutes, and after cooling, repeat the above operations to prepare a multilayer film. The prepared multilayer film was heat-treated at 59...

Embodiment 2

[0026] Add a small amount of deionized water to dissolve lead acetate, strontium carbonate, and magnesium carbonate into acetic acid, and heat to obtain a colorless and transparent solution; dissolve butyl titanate into ethylene glycol methyl ether, and stir until they are evenly mixed. Mix the two solutions to obtain a Pb-Sr-Mg-Ti precursor sol, in which the concentrations of the four components of Pb, Sr, Mg, and Ti are: Pb: 0.26mol / L, Sr: 0.08mol / L, Mg : 0.035mol / L, Ti: 0.315mol / L. Immerse the ITO glass slide in the prepared sol system at a constant speed (5cm / min), and place it for 15 seconds to keep the ITO glass slide in a stable state, and then lift it at the same speed (5cm / min) until the substrate is completely lifted out of the liquid surface , and then dry naturally in the air. Then put it into a high-temperature furnace, perform rapid heat treatment at 550° C. for 5 minutes, and after cooling, repeat the above operations to prepare a multilayer film. The prepared...

Embodiment 3

[0028]Add a small amount of deionized water to dissolve lead acetate, strontium carbonate, and magnesium carbonate into acetic acid, and heat to obtain a colorless and transparent solution; dissolve butyl titanate into ethylene glycol methyl ether, and stir until they are evenly mixed. Mix the two solutions to obtain a Pb-Sr-Mg-Ti precursor sol, in which the concentrations of the four components of Pb, Sr, Mg, and Ti are: Pb: 0.24mol / L, Sr: 0.10mol / L, Mg : 0.035mol / L, Ti: 0.315mol / L. Dip the Si substrate into the prepared sol system at a constant speed (5cm / min), place it for 12 seconds to keep the Si substrate in a stable state, and then lift it up at the same speed (5cm / min) until the substrate is completely lifted out of the liquid surface, and then Dry naturally in the air. Then put it into a high-temperature furnace, perform a rapid heat treatment at a temperature of 580° C. for 5 minutes, and after cooling, repeat the above operations to prepare a multilayer film. The ...

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PUM

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Abstract

The invention discloses a preparing method of high-dielectric adjustable film material of strontium lead titanate doped magnesium, which comprises the following steps: adopting butyl phthalate, lead acetate, strontium carbonate and magnesium carbonate as raw material; making ethandiol dimethyl ether and acetate as solvent; allocating sol former; adopting allocated relative sol former as coating solution; using immersing sash method to prepare film layer; drying the coating; disposing under high-temperature; sintering to obtain PSMT ferric electric film.

Description

technical field [0001] The invention relates to a preparation method of a high-magnesium-doped strontium-lead titanate high-dielectric adjustable film material. Background technique [0002] In recent years, ferroelectric thin films have been used to make ferroelectric storage memories, pyroelectric detector arrays, Piezoelectric motors, ferroelectric film capacitors, film sensor arrays, iron point film microwave devices, ferroelectric optics and integrated optics, etc. It can be widely used in many fields such as microelectronics, integrated optics, and micromechanics. With the advancement of thin film preparation technology and the development of application fields, especially the preparation technology of ferroelectric thin film can be compatible with semiconductor integrated circuit technology, making the development and research of ferroelectric, piezoelectric, Pyroelectric, electro-optic, nonlinear optics and many other functions in one multifunctional circuit, devic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/47C04B35/472C03C17/22C04B41/87
Inventor 杜丕一李晓婷翁文剑韩高荣赵高凌沈鸽徐刚张溪文
Owner ZHEJIANG UNIV
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