Preparation method of highly magnesium-doped strontium plumbum titanate high dielectric adjustable film material
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- ZHEJIANG UNIV
- Publication Date
- 2007-04-25
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention relates to a preparation method of a high-magnesium-doped strontium-lead titanate high-dielectric adjustable film material. Background technique
[0002] In recent years, ferroelectric thin films have been used to make ferroelectric storage memories, pyroelectric detector arrays, Piezoelectric motors, ferroelectric film capacitors, film sensor arrays, iron point film microwave devices, ferroelectric optics and integrated optics, etc. It can be widely used in many fields such as microelectronics, integrated optics, and micromechanics. With the advancement of thin film preparation technology and the development of application fields, especially the preparation technology of ferroelectric thin film can be compatible with semiconductor integrated circuit technology, making the development and research of ferroelectric, piezoelectric, Pyroelectric, electro-optic, nonlinear optics and many other functions in one multifunctional circuit, devic...