Object position measurement apparatus and method
A measuring device and object technology, which is applied in the field of silicon wafer position measuring devices, can solve the problems of reducing the measurement accuracy of the exposure field, and achieve the effects of improved measurement accuracy and simple lighting structure
Active Publication Date: 2009-04-08
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology
[0005] 3) It can only realize one-dimensional scanning, that is, it can only measure the points on the line that is perpendicular to the center of the overexposure field and the plane formed by the optical axis of the focusing system and the optical axis of the projection objective lens, and can only measure the inclination of a certain direction and defocus information
Reduced measurement accuracy over the entire exposure field
Method used
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no. 2 example
[0064] The second embodiment of the present invention is as follows:
[0065] Such as Figure 7 It is a schematic diagram of the principle of the second embodiment of the present invention, and also depicts the process of light compression, 3' is the illumination scanning unit (LC'), 4' is the cylindrical scanning lens group, 50 is the front compensation unit, and 7' is the projection The aperture stop of the unit and other structures are the same as those of the first embodiment.
[0066]The light a from the LC' unit 3' enters the cylindrical scanning lens group 4', and after being compressed in one direction, forms a bar-shaped light beam on the focal plane of the cylindrical scanning lens group 4', passes through the front compensation unit 50, and passes through the projection unit 6, 8 is imaged on the silicon wafer surface 2, and the measurement principle is the same as that of the first embodiment.
[0067] Figure 8 Shown is the structural diagram of the lighting an...
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Abstract
The invention provides a full exposure field measurement scheme based on an idea of direct scanning and measurement. The measurement scheme needs a simple illumination structure, and realizes the full-coverage scanning and measurement of the whole exposure field range by directly using a scanning set and an optical compensation structure, which greatly improves the measurement precision. The brief principle of the measurement scheme is as follows: the scanning set realizes the full field scanning of light spots on a silicon slice surface exposure field, and the optical compensation structure ensures that imaging of the scanning points on the exposure field is clear and the finally measured light spots vertically radiates on a detector, thus the position information of every part of the exposure field can be obtained by detection.
Description
technical field [0001] The invention relates to the measurement of the position of an object, in particular to a device and a method for measuring the position of a silicon wafer of a lithographic equipment. Background technique [0002] A projection lithography machine is a device that projects a pattern on a mask onto a silicon wafer through an objective lens. In the projection exposure equipment, there must be an automatic focus control system to accurately bring the silicon wafer to the designated exposure position, and there are many different technical solutions for realizing this system. At present, the non-contact photoelectric measurement technology is commonly used, among which the focusing technology of NIKON, CANON, and ASML is the most representative. In order to obtain the height and tilt information in the entire exposure field, multiple measurement marks are designed in the exposure field. The design, processing and adjustment of the marking plate and shutdo...
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IPC IPC(8): G03F7/20G01S17/06
Inventor 张冲
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD