Method for fabricating CMOS image sensor
A technology of image sensor and manufacturing method, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as high electric power consumption, complex manufacturing process of light processing, corrosion of grounding metal pads, etc., and achieve step difference The effect of protection
Inactive Publication Date: 2009-07-01
DONGBU HITEK CO LTD
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Problems solved by technology
[0005] Disadvantages of CCDs include: complicated driving method, high electrical power consumption, and complex manufacturing process requiring multi-step light processing
Moreover, there are other shortcomings in this CCD: it is difficult to integrate
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[0021] Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.
[0022] as example Figure 2A As shown, a CMOS image sensor manufactured according to an embodiment of the present invention may include a dielectric film 201 , such as a gate dielectric film or an interlayer dielectric film formed on and / or over a semiconductor substrate 200 . Metal pad 202 for each signal line is formed on and / or over dielectric film 201 . First passivation film 203 formed of at least one of an oxide film and a nitride film is formed on and / or over the entire surface of dielectric film 201 including metal pad 202 . Subsequently, a photosensitive film is applied to an upper portion of the first passivation film 203 and is patterned through an exposure and development process perf...
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A method for fabricating a CMOS image sensor for preventing corrosion of a metal pad is disclosed. The method for fabricating the CMOS image sensor can include sequentially forming a dielectric film, a metal pad having an opening, and a first passivation film on a semiconductor substrate having a scribe lane and a pixel region defined therein, forming a color filter layer on the first passivation film at the pixel region, forming an overcoat layer on the entire surface of the semiconductor substrate, including the metal pad, to reduce the step difference between the scribe lane and the pixel region, forming a micro lens on the overcoat layer at the pixel region, forming a photo resist to expose the overcoat layer at the scribe lane, performing an etching process on the entire surface of the semiconductor substrate to etch the overcoat layer at the scribe lane, and removing the photo resist by a cleaning process. The invention can minimize the step difference between the scribe lane and the pixel region to protect the metal pad, thereby preventing the occurrence of striation and the corrosion of the metal pad.
Description
[0001] This application claims priority from Korean Patent Application No. 10-2007-0140311 with a filing date of December 28, 2007, which is hereby incorporated by reference in its entirety. technical field [0002] The present invention relates to a complementary metal oxide silicon (CMOS) image sensor, and more particularly, to a method of manufacturing a CMOS image sensor capable of preventing metal pads from being corroded. Background technique [0003] Image sensors are semiconductor devices used to convert optical images into electrical signals. The image sensor is generally classified into a charge-coupled device (CCD) and a CMOS image sensor. [0004] The CCD may include a plurality of photodiodes (PDs) arranged in a matrix, each photodiode converting an optical signal into an electrical signal. In the matrix of photodiodes, a plurality of vertical charge-coupled devices (VCCDs) are arranged between respective vertically arranged adjacent photodiodes to transfer cha...
Claims
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Login to View More IPC IPC(8): H01L21/822H01L27/146
CPCH01L27/14627H01L27/14632H01L27/14687H01L27/146
Inventor 尹盈提
Owner DONGBU HITEK CO LTD