70results about How to "Reduce step difference" patented technology

A semiconductor device including a transistor and a connection portion is provided. The transistor includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film and at a position overlapping with the gate electrode, and source and drain electrodes electrically connected to the oxide semiconductor film; and the connection portion includes a first wiring on the same surface as a surface on which the gate electrode is formed, a second wiring on the same surface as a surface on which the source and drain electrodes are formed, and a third wiring connecting the first wiring and the second wiring. The distance between an upper end portion and a lower end portion of the second wiring is longer than the distance between an upper end portion and a lower end portion of each of the source and drain electrodes.

Provided are an organic light emitting display device and a method for manufacturing the same. A color filter is disposed on a substrate. An overcoating layer is disposed on the color filter and includes a plurality of protrusions or a plurality of recesses. The plurality of protrusions and the plurality of recesses are disposed on the color filter to be overlapped with the color filter. A buffer layer for reducing step difference is disposed on the overcoating layer. The buffer layer has a higher refractive index than the overcoating layer and reduces a step difference caused by the plurality of protrusions and the plurality of recesses. An organic light emitting element including an anode, an organic light emitting layer, and a cathode is disposed on the buffer layer. Since the buffer layer has a higher refractive index than the overcoating layer, light extraction efficiency can be increased.

The present disclosure relates to an organic light emitting display device and a method for manufacturing the same. The present disclosure suggests an organic light emitting display device including an organic layer; a display element layer including a display area representing video data and a pad area extended from the display area, on the organic layer; film elements formed on the display element layer; a film type printed circuit board connected to the pad area; and a reinforcing adhesive filling a space between the film type printed circuit board and the film elements

A display substrate includes a transistor, a black matrix and a color spacer. The transistor is connected to a gate line, and a data line crossing the gate line. The black matrix includes a first light-blocking portion covering the gate line and the data line, and a second light-blocking portion covering a channel of the transistor. The second light-blocking portion has a thickness which is smaller than a thickness of the first light-blocking portion. The color spacer is disposed on the second light-blocking portion.

A method of production of a ceramic electronic device such as a multilayer ceramic capacitor, comprising forming a first ceramic coating layer on the surface of a substrate, forming an internal electrode on the surface of the first ceramic coating layer, then forming a second ceramic coating layer on the surface of the first ceramic coating layer so as to cover the internal electrode. In this case, when a mean particle size of ceramic particles of the first ceramic coating layer is alpha1, a thickness of the first ceramic coating layer is T1, a mean particle size of ceramic particles of the second ceramic coating layer is alpha2, and a thickness of the second ceramic coating layer is T2, the conditions of alpha1<=alpha2, 0.05<alpha1<=0.35 mum, T1<T2, and 0<T1<1.5 mum are satisfied. As a result, it is possible to provide a ceramic electronic device, in particular a multilayer ceramic capacitor, resistant to short-circuit defects, withstand voltage defects, and other structural defects.

Provided is a display device integrated with a touch screen panel including a display unit including a plurality of pixels at a sealed region between a lower substrate and an upper substrate; first touch electrodes extending in a first direction on the upper substrate in the sealed region, wherein one ends of the first touch electrodes extend to a non-sealed region on the lower substrate; and a sloped portion beneath the first touch electrodes at a boundary between the sealed region and the non-sealed region.

A display panel includes a base substrate having a plurality of pixel areas, in which each pixel area includes a plurality of sub-pixel areas, a light blocking layer pattern generally defining the sub-pixel areas, and a plurality of color filter patterns. Upper surfaces of the light blocking layer pattern and the plurality of color filter patterns collectively form a generally flat surface.

The memory card socket of the Present Disclosure can achieve a microminiaturized and ultraslim configuration of a memory card/micro SIM card socket, in regard to the formation of the movement zones having step differences in the guide groove in order to ensure movement of the end of the pin rod along the guide groove, wherein a heart-shaped guide groove is formed within the heart cam and the end of the pin rod is inserted into the guide groove, by reducing the total thickness of the heart cam, through a reduction in the number of step differences of the zones from at least three to one, and replacement of the eliminated step differences with sloped protrusions.

The invention discloses a production method for an array substrate of an active-matrix organic light-emitting display (OLED). The production method comprises the following steps of: providing a substrate; forming a first semiconductor graph and a second semiconductor graph on the substrate; continuing to form a grid insulating layer and a first metal layer, and forming a grid by photo-etching; depositing an interlayer insulating layer, and forming four contact holes by means of etching; continuing to form a second metal layer, a source, a drain and a storage capacitor electrode; then continuing to form a passivation insulating layer and a transparent electrode layer; and finally forming a protecting film layer and an evaporation material layer on the whole surface, and exposing by a multi-grey-scale mask plate to form a stepped protecting film layer. In the production method for the array substrate of the OLED provided by the invention, the multi-grey-scale mask plate is used for exposing to form the stepped protecting film layer, thus effectively reducing the step difference of the protecting film layer and decreasing the occurrence probability of the poor display of the point defects of an AMOLED (active-matrix/organic light-emitting diode), and then improving the display quality of the AMOLED.

An organic thin film transistor (TFT), a method of making and a display including the organic TFT. In the TFT, the disconnection of a channel region does not occur because a step difference between a substrate and source and drain electrodes is lessened or eliminated by forming the source and drain electrodes in grooves in a buffer film. The method of manufacturing the organic TFT includes forming a buffer film on a substrate, forming concave units separated by a distance from each other in the buffer film by etching the buffer film, forming an electrode layer on the buffer film, forming source and drain electrodes within the concave units by etching the electrode layer using a photolithography process, forming a semiconductor layer on the source and drain electrodes and on the buffer film, forming a gate insulating film on the semiconductor layer and forming a gate electrode on the gate insulating film.

The invention belongs to repair technology of a composite material blade of a rotor system, and relates to an enhanced method after damage of a composite material blade skin and internal filling. Theenhanced method comprises the following steps that after damaged areas are cleaned, a filling area is formed; adhesive films are laid in the filling area, the bottom surface and the side surfaces of acore material filling area are coated with the adhesive films; the core material filling area is filled with core materials, adhesive film materials are laid on an entire repair area on the upper part of the filling core materials, and the all skin damaged areas are covered with the adhesive film materials; and the upper part of a docking area of the filling core materials and a blade structure is covered with a prepreg. The enhanced method is used for smoothing the small jump between the filling core materials and the blade structure.

A semiconductor device has a plurality of interconnect layers each including a plurality of interconnect lines. The semiconductor device includes a dielectric film (HDP film) formed by means of high density plasma-enhanced CVD and including an edge formed on the side surface of the topmost-layer interconnect lines, a silicon oxide film formed by modifying a SOG film on the HDP film between adjacent two of the topmost-layer interconnect lines in the element forming region, and a passivation film formed to cover the HDP film and the topmost-layer interconnect lines.

Provided is an electro-optical device including: a plurality of pixel electrodes arranged in a pixel region; a lower electrode disposed at a lower layer side of the plurality of pixel electrodes with a dielectric film interposed therebetween so as to at least partially overlap the plurality of pixel electrodes in plan view; and a step difference reduction film disposed on an underlying surface of the lower electrode and formed in at least a portion of a lower electrode non-forming region of the pixel region so as to reduce a step difference between the upper surfaces of the lower electrode and the underlying surface in the lower electrode non-forming region.