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Method for smoothing III-N substrates

A substrate and smoothing agent technology, applied in the field of III-N templates, can solve problems such as process trouble

Active Publication Date: 2013-03-27
FREIBERGER COMPOUND MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Polishing at higher temperatures is process-intensive

Method used

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  • Method for smoothing III-N substrates
  • Method for smoothing III-N substrates

Examples

Experimental program
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Embodiment

[0045] A PT350 Premium from the company Fa.I-B-S Fertigungs-und Vertriebs GmbH can be used as a polishing machine. The GaN wafer with (0001) orientation and the N pole backside are glued with the aid of hot wax onto a heated carrier plate, wherein the heated carrier plate is cooled down to room temperature before the process begins. A polishing cloth (a polyurethane-based cloth of medium hardness (Rohm and Haas SUBA IV) was pasted on the polishing pad. cBN slurry (CBN Slurry W69S 16 μm / 3 μm HVY, agent Manfred Boeduel, Wittenberg, Germany) was applied at ~5 ml / The flow rate of min was dripped in. The use of cBN slurry was carried out in two polishing levels carried out independently of each other, and these two polishing levels adopted cBN particles of 6 μm and 3 μm respectively (with medium particle size respectively). The polishing pad and the sample were respectively in ~ 30min -1 and ~20min -1rotate. Furthermore, the centrifuged sample is vibrated in the radial directio...

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Abstract

The invention relates to a method for producing smooth III-N, particularly smooth III-N substrate or III-N template, III meaning at least one element from group III of the periodic table selected among Al, Ga, and In. A smoothing means comprises cubic boron nitride as an abrasive particle. Said method makes it possible to create large-area III-N substrates or III-N templates that have a minimum diameter of 40 mm with a homogeneous very low surface roughness across the entire surface of the substrate or wafer. For example, the standard deviation of the rms values is 5 percent or less when the wafer surface is mapped by means of a white light interferometer. Said property can be obtained along with very good crystal quality on the surface or in areas near the surface, said quality being measured by means of rocking curve mapping and / or micro-Raman mapping, for example.

Description

technical field [0001] The present invention relates to a method for smoothing, in particular grinding and / or polishing, a material with a III-N surface, in particular a III-N substrate or a III-N template with a heterogeneous substrate. Here, N represents nitrogen, and III represents at least one element of main group III of the periodic table selected from aluminum, gallium, and indium (hereinafter abbreviated as (Al, Ga, In)). The present invention also relates to III-N substrates and III-N templates with heterogeneous substrates. The III-N substrate and III-N template are very suitable for device fabrication as substrates or templates. Background technique [0002] Mechanical and / or chemical mechanical polishing has long been a standard method used in the industry to flatten and smooth the surface of semiconductor substrates such as GaAs. Here, smooth and flat and fault-free substrate surfaces are prerequisites for subsequent epitaxy or lithographic steps for the manuf...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304H01L21/306C30B33/00
CPCH01L21/02024C09G1/02C09K3/1409H01L21/30625H01L21/304C30B33/00C30B29/38
Inventor S·霍尔兹格G·莱比格
Owner FREIBERGER COMPOUND MATERIALS