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7 results about "Micro raman" patented technology

Multi-mode microscopic Raman spectrum detection system

The invention discloses a multi-mode microscopic Raman spectrum detection system, which comprises a white light microscopic imaging module, a reflection type Raman spectrum excitation and detection module, a transmission type Raman spectrum excitation and detection module, an optical information excitation module and an optical guiding module. Light path integration of all the modules is realized by sharing a microscope objective, image acquisition, reflection Raman detection and transmission Raman detection of a sample can be completed on the same platform, and the device has the advantages of high spatial alignment, flexible operation switching and adaptability to detection of multiple types of samples, and is suitable for micro-area Raman analysis in the fields of biomedicine, material science and the like.
Owner:NORTHWEST UNIV

Pressurization and straining apparatus, X-ray diffraction apparatus using the same, micro-Raman scattering measurement apparatus, and optical microscope.

ActiveJP7884262B2Micro ramanMaterials science
To provide a pressure / strain device capable of performing pressurization in one direction, and automatically measuring physical property evaluation of a sample from the one direction and a direction perpendicular to the one direction, an X-ray diffraction device using the pressure / strain device, a microscopic Raman scattering measurement device and an optical microscope.SOLUTION: A pressure / strain device of the present invention comprises first and second diamond anvils for holding a sample. The pressure / strain device comprises: a sample holding part in which the first diamond anvil rotates; a rotation mechanism that rotates the first diamond anvil; a pressing mechanism that mechanically applies pressure from the first diamond anvil side; an actuator that applies pressure by an electric signal to the second diamond anvil, and is hollow; a pressure sensor that detects a pressure applied to the sample held between the first and second diamond anvils; and a control mechanism that controls, and detects these operations.SELECTED DRAWING: Figure 1
Owner:NAT INST FOR MATERIALS SCI

Microfluidic burner for microscopic optical diagnostic tests

The application provides a micro-fluidic burner for microscopic optical diagnosis experiment, and belongs to the technical field of online combustion diagnosis. The burner comprises a mounting assembly for fixing the micro-fluidic burner, a cavity assembly for connecting with an experimental gas path, a nozzle connected with the gas path in the cavity assembly for realizing ignition combustion, a nozzle fixing assembly for fixing the nozzle on the cavity assembly, and a light window for transmitting laser and weak scattering signals of optical diagnosis to observe combustion. The cavity assembly comprises a sealingly connected upper cavity and lower cavity. The micro-fluidic burner can ignite methane, acetylene, ethylene and other gas flames, has the characteristics of small volume and replaceable nozzle, realizes positioning and fitting of the combustion nozzle by adopting a conical surface structure, can replace combustion nozzles with different structures according to actual research needs, can be used for microscopic diagnosis in the optical aspect, and can be particularly applied to in-situ microscopic Raman spectrum diagnosis of combustion carbon deposition.
Owner:INST OF ENGINEERING THERMOPHYSICS - CHINESE ACAD OF SCI

Active material, electrode, secondary battery, battery pack, and vehicle

This invention provides active materials, electrodes, secondary batteries, battery packs, and vehicles for secondary batteries that achieve excellent fast charge / discharge performance and cycle life. It provides an active material comprising a composite oxide having a crystal structure comprising a rhenium oxide-type bulk structure containing an octahedral structure composed of oxygen and metal elements, and formed by the common vertices of the octahedral structure. The composite oxide is in the form of the general formula Li. a M b NbMo c O d M is selected from any one or more of Ti, V, Ta, Fe, Co, Mn, Ni, Bi, Sb, As, P, Cr, W, B, Na, K, Mg, Al, Ca, Y, and Si, where 0 ≤ a ≤ b + 2 + 3c, 0 ≤ b ≤ 1.5, 0 ≤ c ≤ 0.5, and 2.33 ≤ d / (1 + b + c) ≤ 2.50. In the micro Raman spectrophotometer of the composite oxide at an excitation wavelength of 532 nm, the value is located at 640 ± 10 cm⁻¹. ‑1 The displacement S1 of the Raman peak P1 originating from the Mo-O bond is located at 920±20cm. ‑1 The difference in displacement S2 of the Raman peak P2 originating from the Nb-O bond is 285 cm. ‑1 above.
Owner:KK TOSHIBA

Microscopic Raman spectroscopy device and method for adjusting microscopic Raman spectroscopy device

Microscopic Raman spectroscopy device that detects and analyzes Raman scattering light emitted from sample irradiated with excitation light includes: laser light source that emits excitation light; spectrometer for measuring spectrum of the Raman scattering light; wavelength discriminator such as a dichroic filter that reflects the excitation light emitted from the laser light source toward the sample and transmits Raman scattering light emitted from the sample toward the spectrometer; condenser lens arranged between wavelength discriminator and the spectrometer for condensing the Raman scattering light passing through the wavelength discriminator; aperture arranged between the condenser lens and the spectrometer for limiting Raman scattering light incident on the spectrometer; adjusting means for adjusting to match a position of spot image of Raman scattering light condensed by condensing lens with a position of the aperture so that light amount of Raman scattering light passing through the aperture is maximized.
Owner:SHIMADZU CORP

Method and system for measuring three-dimensional sphericity and components of micro-plastic particles

The invention discloses a method and a system for measuring three-dimensional sphericity and components of micro-plastic particles. The method comprises the following steps: scanning a filter membrane by utilizing microscopic Raman or confocal Raman, screening and positioning suspected micro-plastic particles based on Raman fingerprint peaks, and determining polymer components; then, on the same filter membrane or slide glass, transferring the sample to a scanning electron microscope equipped with a variable inclination angle sample table, performing high-resolution imaging on the same particle at a plurality of inclination angles to obtain a single particle three-dimensional shape model, and calculating parameters such as volume, surface area and sphericity; one-to-one correspondence of Raman data and SEM data is realized through registration of grid coordinates and feature points of the filter membrane, and a single-particle database of spatial position-polymer type-three-dimensional morphology-sphericity is established. According to the method, a pretreatment process of enzyme digestion, mild oxidation and density separation is designed, micro-plastic particles are enriched on a filter membrane or a slide glass which is provided with a two-dimensional coordinate mark, can be used for Raman detection and is provided with a conductive coating on the surface, and the detection precision is improved.
Owner:UNIV OF SHANGHAI FOR SCI & TECH

Wafer-level carbon-based semiconductor epitaxial layer shape parameter measuring device

The invention discloses a shape parameter measuring device for a wafer-level carbon-based semiconductor epitaxial layer, and the device comprises a vertical sample stage module which is used for clamping a wafer sample and enabling the wafer sample to be perpendicular to the upper surface of a rack; the combined light source type ellipsometry module and the confocal microscopic Raman spectrum measurement module are respectively used for detecting ellipsometry spectrum information and Raman spectrum information of the same point position on a carbon-based semiconductor epitaxial layer on the surface of the wafer sample; the combined light source type ellipsometry module and the confocal microscopic Raman spectrum measurement module are respectively connected with the data processing module, the physical characteristics of the carbon-based semiconductor epitaxial layer are extracted according to Raman spectrum information and ellipsometry spectrum information, and an optical model and an oscillator model are established according to the physical characteristics of the carbon-based semiconductor epitaxial layer. By means of the method, the problem that it is difficult to carry out high-precision in-situ characterization on the shape parameters of the large-size wafer is solved.
Owner:CHINA JILIANG UNIV