Micrometering system for measuring electro-spin fluorescence

A microscopic measurement and fluorescence technology, which can be used in electrical excitation analysis, material excitation analysis, etc., and can solve problems such as low spin polarizability

Inactive Publication Date: 2009-11-18
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Description
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Problems solved by technology

However, the spin polarizability in semiconductors at room temperature is still very l

Method used

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  • Micrometering system for measuring electro-spin fluorescence
  • Micrometering system for measuring electro-spin fluorescence
  • Micrometering system for measuring electro-spin fluorescence

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[0025] As an example, we used this system to measure the spectral properties of Fe / GaAs quantum wells. Test results such as figure 2 with image 3 ; figure 2 It is the electroluminescence spectrum of the Fe / GaAs quantum well sample tested by the test system without a magnetic field; we can see from the figure that the intensity of the luminescence peak of the electrotropic quantum well is in the case of zero magnetic field, left and right handed polarized light The strength is the same, as indicated by the arrow in the figure; this is because the initial magnetization direction of Fe is parallel to the surface, so the electroluminescent intensity of left and right circularly polarized light should be equal, which also proves the correctness of our system; image 3 It is the electroluminescence spectrum of the Fe / GaAs quantum well sample tested by the test system under the magnetic field perpendicular to the surface. At this time, the external magnetic field makes the magne...

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Abstract

The invention relates to a micrometering system for measuring electro-spin fluorescence, which is characterized by comprising a micro Raman spectrometer, a broad-band line polaroid sheet, a broad-band one-fourth wave plate, a magnet system, a digital voltage source meter and an over-long operating distance microobjective. The micro Raman spectrometer, the broad-band line polaroid sheet and the broad-band one-fourth wave plate are spaced by preset distances and positioned in a same light path; the digital voltage source meter is connected in parallel with the magnet system; and the over-long operating distance microobjective is positioned between the broad-band one-fourth wave plate and the magnet system and is in the same light path with the broad-band one-fourth wave plate and the magnet system.

Description

technical field [0001] The invention belongs to the technical field of semiconductor optical property testing technology and magnetic material magnetic property testing technology, and in particular relates to the measurement technology of the spin efficiency of ferromagnetic metals injected into semiconductors; it provides a microscopic measurement system for measuring electrospin fluorescence. Background technique [0002] Modern information technology uses the charge degree of freedom of electrons for information processing, and uses the spin degree of freedom of magnetic materials to store information. The emerging field of spintronics exploits these two degrees of freedom of electrons simultaneously to generate new functions, which may lead to future innovations in information technology. However, the spin polarizability in semiconductors at room temperature is still very low so far, so the spin injection efficiency is currently a research hotspot in spintronics. The u...

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Application Information

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IPC IPC(8): G01N21/66
Inventor 肖文波郑厚植徐萍鲁军刘剑李桂荣谭平恒赵建华章昊朱汇甘华东李蕴慧朱科吴昊张泉袁思芃罗晶申超李科
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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