Three-silver low radiation film glass capable of being subsequently processed
A low-emissivity film and glass technology, applied in the field of triple-silver low-emissivity film glass, can solve the problems of long patch cycle, inability to coat, and high glass transportation cost, and achieve the effects of various colors, stable optical performance and low emissivity
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[0045]The film layer structure of the triple-silver low-emissivity film glass that can be subsequently processed provided by the present invention is: glass substrate / first base dielectric combination layer (5.0-10.0nm) / second base dielectric combination layer (5.0-10.0nm) / The first barrier layer (0.5-5.0nm) / the first Ag layer (8-35nm) / the second barrier layer (0.5-5.0nm) / the first interlayer dielectric combination layer (50-70nm) / the third barrier layer ( 0.5~5.0nm) / second Ag layer (8-35nm) / fourth barrier layer (0.5~5.0nm) / second interlayer dielectric composite layer (60-80nm) / fifth barrier layer (0.5~5.0nm) / third Ag layer (8-35nm) / sixth barrier layer (0.5-5.0nm) / first upper dielectric composite layer (10-35nm) / second upper dielectric composite layer (10-30nm).
[0046] Each dielectric film layer is a metal or non-metal oxide or nitride deposited by vacuum sputtering, such as TiO 2 , ZnSnO x , SnO 2 , ZnO, SiO 2 、 Ta 2 o 5 、BiO 2 、Al 2 o 3 , ZnAl 2 o 4 , Nb 2 o ...
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Abstract
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