Transistor having vertical channel and method for fabricating the same

Abstract

A semiconductor device including vertical channel transistor and a method for forming the transistor, which can significantly decrease the resistance of a word line is provided. A vertical channel traA semiconductor device including vertical channel transistor and a method for forming the transistor, which can significantly decrease the resistance of a word line is provided. A vertical channel transistor includes a substrate including pillars each of which has a lower portion corresponding to a channel region. A gate insulation layer is formed over the substrate including the pillars. A metalnsistor includes a substrate including pillars each of which has a lower portion corresponding to a channel region. A gate insulation layer is formed over the substrate including the pillars. A metallayer having a low resistance is used for forming a surrounding gate electrode to decrease resistance of a word line. A barrier metal layer is formed between a gate insulation layer and a surroundinglayer having a low resistance is used for forming a surrounding gate electrode to decrease resistance of a word line. A barrier metal layer is formed between a gate insulation layer and a surroundinggate electrode so that deterioration of characteristics of the insulation layer is prevented. A world line is formed connecting gate electrodes formed over the barrier layer to surround the lower portgate electrode so that deterioration of characteristics of the insulation layer is prevented. A world line is formed connecting gate electrodes formed over the barrier layer to surround the lower portion of each pillar.ion of each pillar.

Description

[0001] related application [0002] This application claims priority from Korean Patent Application No. 10-2008-0018439 filed on February 28, 2008, the entire contents of which are hereby incorporated by reference. technical field [0003] The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a semiconductor device having a vertical channel transistor and a method of manufacturing the same. Background technique [0004] Recently, active research has been conducted on transistors having vertical channels in order to increase the degree of integration of semiconductor devices. [0005] Figure 1A A plan view illustrating a typical transistor with a vertical channel, Figure 1B description in Figure 1A A cross-sectional view of the cell (Cell) along the line A-A'. exist Figure 1A The floor plan in is along the Figure 1B The plane cut by the midline A-A' is obtained while maintaining the height of the dotted line. [...

AI Technical Summary

Problems solved by technology

[0009] Since the surrounding electrode 13 and the damascene word line 14 are usually formed of polysilicon, the resistance of the word line is greatly increased.

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