Diode with low frequency, low noise and low twinkling

A low-noise, diode technology, applied in the field of diodes, can solve the problems of overcurrent, too fast reverse recovery time, unstable waveform, etc.

Inactive Publication Date: 2009-09-02
如皋市日鑫电子有限公司
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The disadvantages of diodes currently on the market are: because the chip is square, it is easy to produce sharp-edged discharge, and because the chip area is not more than 44mil, it is too small, and the chip thickness is not more than 0.28mm, which is too thin, and it is easy to generate overcurrent and reverse recovery during operation. The time is too fast, resulting in unstable waveform after rectification

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diode with low frequency, low noise and low twinkling
  • Diode with low frequency, low noise and low twinkling

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0008] Such as figure 1 As shown, the diode of the present invention is sequentially welded together by electrode 1, soldering tab 2, chip 3, soldering tab 4, and electrode 5, and is sealed with silicon rubber or polyimide glue 6 between the two electrodes after welding. In order to achieve the purpose of increasing the working current, the chip is designed as a hexagon, such as figure 2 As shown, the maximum opposite surface is 65mil, and the diagonal is 1.91mm; the thickness of the hexagonal chip is 300±5μm; the size of the electrode large table is: 1.92±0.05mm.

[0009] The above components are welded together, and then sealed and connected with a 2.0-2.7mm package 7 to form a complete diode. Because the diode breaks through the traditional shape and size design of electrodes, pads, and chip components, it can pass a working current of 1-2.5A, and has the characteristics of low frequency, low noise, and low flicker.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a diode with low frequency, low noise and low twinkling, which is formed by sequentially welding an electrode, a welding piece, a chip, a welding piece and an electrode. The diode is characterized in that the chip is in a hexagonal shape, and has the maximum diagonal plane of 65 mil and the diagonal of 1.91 mm; the thickness of the chip is 300 plus / minus 5 microns; an electrode large platform is 1.92 plus / minus 0.05 mm. The purposes of increasing working current and improving reverse recovery time are achieved by changing the shapes and the sizes of the electrodes, the welding pieces and the chip, thereby the diode has the characteristics of low frequency, low noise and low twinkling.

Description

technical field [0001] The invention relates to a diode, in particular to a low-frequency, low-noise and low-flicker diode with an operating current of 1-2.5A. Background technique [0002] The disadvantages of diodes currently on the market are: because the chip is square, it is easy to produce sharp-edged discharge, and because the chip area is not more than 44mil, it is too small, and the chip thickness is not more than 0.28mm, which is too thin, and it is easy to generate overcurrent and reverse recovery during operation. The time is too fast, resulting in instability of the rectified waveform. Contents of the invention [0003] The main task of the present invention is to provide a low-frequency, low-noise, low-flicker diode, in particular to a low-frequency, low-noise, low-flicker diode with an operating current of 1-2.5A. [0004] In order to solve the above technical problems, a low-frequency, low-noise, low-flicker diode of the present invention is composed of el...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/861H01L23/48H01L23/482H01L23/488
CPCH01L24/01
Inventor 陆国华陈炎吴亚红沙敏
Owner 如皋市日鑫电子有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products