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Architecture and method for a voltage pump shared by a plurality of nonvolatile memories

A non-volatile and memory technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of small occupied area of ​​voltage pump and increase of production cost

Inactive Publication Date: 2009-09-16
HOLTEK SEMICON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] (Write) and erase (Erase) only need to output, but the most common operation of integrated circuits using non-volatile memory devices is the read (Read) function, the voltage pump becomes an idle circuit for a long time, and Because the area occupied by the voltage pump in the layout of the integrated circuit is not small, and the production cost is increased

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  • Architecture and method for a voltage pump shared by a plurality of nonvolatile memories
  • Architecture and method for a voltage pump shared by a plurality of nonvolatile memories
  • Architecture and method for a voltage pump shared by a plurality of nonvolatile memories

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Embodiment Construction

[0043] The detailed structure of the present invention and its connections are now described in conjunction with the following drawings.

[0044] see figure 1 As shown, it is a circuit structure diagram of the voltage pumping of the present invention applied to a single non-volatile memory, wherein the voltage pumping (Voltage Pump) possessed in the electrically erasable non-volatile memory device (NVM) Circuit 11 is usually only used when the non-volatile storage device needs to be written (Write) and erased (Erase), so the non-volatile storage device is mostly in the read mode, and each voltage pump Pu Jun is off (OFF), and the high voltage source provided by it is in the form of common voltage source V DD (The high voltage source is the normal working voltage of the integrated circuit) instead, and the normal working voltage of the integrated circuit is a voltage not greater than 5.5 volts, so the setting of the DC voltage conversion circuit can be omitted, and the overall...

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Abstract

The invention provides an architecture and a method for a voltage pump shared by a plurality of nonvolatile memories; wherein the architecture for the voltage pump shared by a plurality of nonvolatile memories comprises a high-voltage power supply and a high-voltage guiding device; the grid of the high-voltage guiding device is controlled by a built-in booster circuit so as to guide the high-voltage power supply into a plurality of nonvolatile memories, thus carrying out the erasing or writing action.

Description

technical field [0001] The present invention relates to a structure and method for multiple non-volatile memories to share a voltage pump, and in particular to a method for application in integrated circuits (ICs) when multiple electrically erasable non-volatile memories are required to exist at the same time. For volatile storage devices (such as voltage-eliminated programmable read-only memory (EEPROM), flash memory (Flash)...), this implementation device can be used to share a voltage pump (Voltage Pump) circuit and provide multiple A non-volatile memory device is used to save the layout area of ​​the repeated function circuit and save its cost. Background technique [0002] Due to the electrically erasable non-volatile storage device (such as: voltage elimination type programmable read-only memory (EEPROM), flash memory (Flash)...), its writing (Write) and erasing ( Erase) function needs to provide a high-voltage voltage source. The usual practice is to provide a high-v...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/30G11C16/08G05F3/16
Inventor 廖俊尧
Owner HOLTEK SEMICON