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Data reading method for flash memory and controller and storage system of same

A data reading and data copying technology, which is applied in the field of data reading, can solve the problems of abnormal data, low stability of use of multi-layer storage unit NAND flash memory, low stability of use, loss, etc., and achieve the effect of avoiding data loss

Active Publication Date: 2012-01-11
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the memory capacity of multi-layer storage unit NAND flash memory will be higher than that of single-layer storage unit NAND flash memory, but the use stability of multi-layer storage unit NAND flash memory will be lower than that of single-layer storage unit NAND flash memory.
[0004] However, no matter when the data stored in the same block in the multi-level storage unit NAND flash memory or the single-level storage unit NAND flash memory is read multiple times, such as the number of times of reading between 100,000 and 1 million times, it is very difficult It may happen that the read data is wrong, and even the data stored in the block that has been read many times will be abnormal or lost

Method used

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  • Data reading method for flash memory and controller and storage system of same
  • Data reading method for flash memory and controller and storage system of same
  • Data reading method for flash memory and controller and storage system of same

Examples

Experimental program
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no. 1 example

[0063] figure 1 is a schematic block diagram illustrating a flash memory storage system according to the first embodiment of the present invention. Please refer to figure 1 , the flash storage system 100 includes a flash controller 110 , a bus connection interface 120 and a flash memory 130 . Generally, the flash storage system 100 is used together with the host 200 so that the host 200 can write data into the flash storage system 100 or read data from the flash storage system 100 . In this embodiment, the flash memory storage system 100 is a USB flash drive. But it must be understood that, in another embodiment of the present invention, the flash storage system 100 may also be a memory card or a solid state drive (SSD).

[0064] The flash memory controller 110 coordinates the overall operations of the bus connection interface 120 and the flash memory 130 , such as data storage, reading, and erasing. The flash memory controller 110 includes a microprocessor 110a and a flas...

no. 2 example

[0092] As mentioned above, in the first embodiment, the buffer read threshold is used to measure whether the buffer storage area implemented by another block of the flash memory 130 reaches the possibility of imminent read disturbance and reconfigures a new buffer storage area. However, the present invention can also reconfigure a new buffer storage area by checking whether the data read from the buffer storage area is an error to determine that read disturbance occurs.

[0093] The hardware structure of the second embodiment of the present invention and the operation of flash memory are similar to the first embodiment (such as figure 1 and Figures 2A-2C ), so the same part will not be repeated here. The difference between the second embodiment and the first embodiment is that in the step of reading data, the second embodiment checks whether the data read from the buffer storage area is an error to determine whether to reconfigure a new buffer storage area.

[0094] Figu...

no. 3 example

[0098] In the first embodiment and the second embodiment, when the flash memory storage system starts up, the frequently read blocks in the data area are firstly determined to configure the buffer storage area to avoid transitional reading of these frequently read blocks. However, the present invention can also dynamically determine the frequently read blocks in the data area of ​​the flash memory during this operation, and configure buffer storage areas for these frequently read blocks.

[0099] The hardware structure of the third embodiment of the present invention and the operation of the flash memory are the same as those of the first embodiment (such as figure 1 and Figures 2A-2C ), so it will not be repeated here.

[0100] Figure 7 is a flowchart illustrating a data reading method according to a third embodiment of the present invention.

[0101] Please refer to Figure 7 , when the flash memory 130 of the flash memory storage system 100 is to be read, in step S701...

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Abstract

The invention relates to a data reading method for a flash memory and a controller and a storage system of the same. The data reading method is applicable to a flash memory storage system with the flash memory, wherein the flash memory actually is divided into a plurality of blocks which at least are grouped into a data area and a spare area. The reading method comprises the following steps of: determining if blocks of the data area are a frequently read block respectively; configuring a buffer storage area corresponding to the frequently read block and copying data stored in the frequently read block to the buffer storage area corresponding to the frequently read block; and when the data in the frequently read block is to read, reading the data from the buffer storage area corresponding to the frequently read block. Thus, data loss caused by reading interference is avoided effectively.

Description

technical field [0001] The invention relates to a data reading method, and in particular to a data reading method for a flash memory and a controller using the data reading method. Background technique [0002] In recent years, due to the rapid development of digital cameras, mobile phones with camera functions, MP3, and MP4, consumers' demand for storage media has also increased sharply. Looking at all the storage media today, flash memory (Flash Memory) is most suitable for being built into the above-mentioned various portable multimedia devices due to its characteristics of data non-volatility, power saving, small size, and no mechanical structure. Furthermore, since external products such as small memory cards and flash drives are in great demand for modern people, all manufacturers of flash memory are all heading towards the research and development direction of increasing the capacity of flash memory and improving the stability of use. And strive to develop. [0003]...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/16G06F3/06
Inventor 朱健华赵伟程
Owner SAMSUNG ELECTRONICS CO LTD
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