Unlock instant, AI-driven research and patent intelligence for your innovation.

Electron blocking layers for electronic devices

A blocking layer and dielectric layer technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as incomplete blocking of charge transport, programming and erasing saturation

Active Publication Date: 2009-11-25
SANDISK TECH LLC
View PDF8 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Al 2 o 3 Does not completely block charge transport and causes program and erase saturation at lower voltage windows

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electron blocking layers for electronic devices
  • Electron blocking layers for electronic devices
  • Electron blocking layers for electronic devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] introduction

[0034] It should be understood that the particular implementations shown and described herein are exemplary and are not intended to otherwise limit the scope of the invention in any way. Indeed, conventional electronics, manufacturing, semiconductor, and other functional aspects of the system (and components of the individual operating components of the system) may not be described in detail herein for the sake of brevity.

[0035] It should be understood that spatial descriptions (eg, "above", "below", "upward", "downward", "top", "bottom", etc.) made herein are for illustration only purposes, and the devices described herein may be spatially arranged in any orientation or manner.

[0036] The terms "adjacent", "on", "over" and "overlying" as used herein to describe the relationship of one layer to another are intended to be interpreted broadly to include Layers that are in contact and layers that are separated by one or more intervening layers. Simil...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Methods and apparatus for electronic devices such as non-volatile memory devices are described. The momory devices include a multi-layer control dielectric, such as a double or triple layer. The multi-layer control electric includes a combination of high-k dielectric meterials such as aluminium oxide (A12O3), Hafnium oxide (HfO2), and / or hybrid films of Hafnium aluminium oxide. The multi-layer control dielectric provides enhanced characteristics, including increased charge retention, enhanced memory program / erase window, improved reliability and stability, with feasibility for single or multistate (e.g, two, three or four bit) operation.

Description

[0001] Cross References to Related Applications [0002] This patent document claims priority to U.S. Patent Application Serial No. 11 / 743,085, filed May 1, 2007, which is an incorporation of U.S. Patent Application Serial No. 11 / 688,087, filed March 19, 2007 Continuation-in-Part, US Patent Application Serial No. 11 / 688,087 is a continuation-in-part of US Patent Application Serial No. 11 / 641,956, filed December 20, 2006, the entire contents of which are incorporated herein by reference. This patent document also claims priority to US Provisional Patent Application Serial No. 60 / 931,488, filed May 23, 2007. technical field [0003] This disclosure relates to memory devices, and more particularly, to flash memory devices. Background technique [0004] A non-volatile memory device, such as a flash memory device, is a memory device that can store information even when no power is supplied. Flash memory devices store information in a charge storage layer separate from the "con...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/44
CPCH01L29/42332H01L29/7881H01L29/42324H01L29/517
Inventor 陈建段镶锋卡伦·克鲁登刘超马迪胡里·L·那拉博卢西盖斯·兰加纳坦弗朗西斯科·利昂J·华莱士·帕斯
Owner SANDISK TECH LLC