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Method for etching high-K metal gate structure

A metal gate, etched technology, applied in semiconductor devices and other directions, can solve the problems of poor selectivity, low sputtering etching rate, long test development cycle, etc., to save time, good self-stop effect, and etching rate high effect

Inactive Publication Date: 2010-01-06
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
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Problems solved by technology

[0003] The present invention aims at the deficiency that the existing reactive ion etching requires a very long test development cycle, and the etching rate of sputter etching

Method used

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  • Method for etching high-K metal gate structure
  • Method for etching high-K metal gate structure
  • Method for etching high-K metal gate structure

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Embodiment Construction

[0017] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0018] figure 1 It is a flowchart of an etching method for a high-K metal gate structure according to an embodiment of the present invention. like figure 1 As shown, the etching method of the high-K metal gate structure comprises the following steps:

[0019] Step 10: After depositing a film on the surface of the polysilicon layer 103 in the high-K metal gate structure, spin-coat photoresist on the surface of the film, and then form a hard mask 104 by etching to form a protection area that does not need to be etched. A first area to be etched and a second area to be etched.

[0020] figure 2 It is a structural schematic diagram of an initial high-K metal gate structure according to an embodiment of the present ...

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Abstract

The invention relates to a method for etching a high-K metal gate structure, which belongs to the technical field of semiconductor devices. The method for etching the high-K metal gate structure comprises the following steps: after deposing a film on the surface of a polycrystalline silicon layer, spin coating photosensitive resist on the surface of the film, and forming a hard mask by etching to form a protective area without etching, a first area needing etching and a second area needing etching; etching away the first area needing etching by sputter etching; and etching away the second area needing etching by reactive ion etching. The method is used for etching the high-K metal gate structure by sputtering physical etching first and then receiving ion etching, not only utilizes the favorable directivity of physical etching, but also takes the advantages of the end point detection of the reactive ions and obtains favorable natural stop effect, thereby the high-K metal gate structure can form a gate figure with steep-fronted side walls.

Description

technical field [0001] The invention relates to an etching method, in particular to an etching method of a high-K metal gate structure, and belongs to the technical field of semiconductor devices. Background technique [0002] As one of the greatest inventions of the 20th century, integrated circuits have been moving towards smaller device sizes. Smaller sizes mean higher computing speeds and higher integration. With the continuous shrinking of integrated circuit device sizes, 45 The high-k metal gate technology (highkmetalgate, HKMG) adopted by Nano has brought a revolution to the integrated circuit manufacturing technology, making Moore's Law continue. Compared with the 65nm SiON+Ploy technology, the 45nm high-k metal gate technology has greatly improved the performance of the device: the integration level has been increased by 2 times, the power consumption has been reduced by 30%, the switching speed has been increased by 20%, and the source The leakage current is reduc...

Claims

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Application Information

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IPC IPC(8): H01L21/28C23F4/00
Inventor 董立军
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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