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Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory

A magnetoresistive random access, spin transfer torque technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as interference with MTJ305 logic state, interference data, memory integrity degradation, etc.

Active Publication Date: 2012-09-19
QUALCOMM INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since both read and write operations are performed by passing current through the MTJ 305, there is a possibility that the read operation disturbs the data stored in the MTJ 305
For example, if the read current is similar in magnitude to or greater than the write current threshold, there is a high chance that the read operation may disturb the logic state of the MTJ 305 and thus degrade the integrity of the memory

Method used

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  • Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
  • Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory
  • Word line transistor strength control for read and write in spin transfer torque magnetoresistive random access memory

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Embodiment Construction

[0024] Aspects of embodiments of the invention are disclosed in the following description and associated drawings directed to specific embodiments of the invention. Alternative embodiments are conceivable without departing from the scope of the invention. Additionally, well-known elements of the invention will not be described in detail or will be omitted so as not to obscure the relevant details of the embodiments of the invention.

[0025] The word "exemplary" is used herein to mean "serving as an example, instance, or illustration." Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. Likewise, the term "embodiments of the invention" does not require that all embodiments of the invention include the discussed feature, advantage or mode of operation.

[0026]As discussed in the background, STT-MRAM uses low write current per cell, which is an advantage of this memory type over MRAM. However,...

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Abstract

Systems, circuits and methods for controlling word line voltage at a word line transistor in Spin Transfer Torque Magnetoresistive Random Access Memory (STT- MRAM) are disclosed. A first voltage can be supplied to the word line transistor for write operations. A second voltage, which is less than the first voltage, can be supplied to the word line transistor during read operations.

Description

[0001] Claim of priority under 35 U.S.C. §119 [0002] This patent application asserts the title "WORD LINE TRANSISTORSTRENGTH CONTROL FOR READ AND WRITE FOR READ AND WRITE IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY" filed on March 6, 2007 IN SPIN TRANSFER TORQUE MAGNETORESISTIVE RANDOM ACCESS MEMORY)" Provisional Application No. 60 / 893,217, which is assigned to the present assignee and is hereby expressly incorporated herein by reference. technical field [0003] Embodiments of the present invention relate to random access memory (RAM). More specifically, embodiments of the invention relate to word line transistor voltage control in spin transfer torque magnetoresistive random access memory (STT-MRAM). Background technique [0004] Random Access Memory (RAM) is a ubiquitous component of modern digital architectures. RAM can be a stand-alone device, or it can be integrated or embedded in a device that uses RAM, such as a microprocessor, microcontroller,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/1659G11C11/1673G11C11/1675G11C11/1657G11C5/063G11C11/15
Inventor 杨赛森升·H·康迈赫迪·哈米迪·萨尼
Owner QUALCOMM INC