Wafer cutting liquid

A cutting fluid and wafer technology, applied in the petroleum industry, lubricating compositions, etc., can solve the problems of chip pollution, product performance failure, high conductivity, etc., and achieve the effect of reducing the probability of bonding and the formation of particles

Active Publication Date: 2012-08-22
RF360 TECH (WUXI) CO LTD
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The conductivity of the cutting fluid is 500us / cm to 1500us / cm, although it can meet the production of most products, but its conductivity is too high, it is easy to promote the combination of soft and hard ions in water to form large particles, thus polluting the cutting fluid
And when cutting some products, it is easy to carry crystal debris after cutting, and stick to the surface of the product, causing slight pollution of the chip and causing product performance failure

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007] The invention is a wafer cutting liquid, which is prepared from pure water, glycerin and silicate, and the weight ratio of pure water, glycerin and silicate is 100:3:0.02.

[0008] Among them, sodium silicate is preferably used as the silicate.

[0009] The present invention changes the main component of the existing cutting fluid from soft water to pure water, reduces the composition of hard ions in the cutting fluid, thus reduces the combination probability of soft and hard ions, and greatly reduces the formation probability of particles in the cutting fluid; The electrical conductivity of the invented cutting fluid is controlled within 100us / cm, which is lower than the existing cutting fluid.

[0010] The cutting fluid of the present invention can also add a set of ultra-fine filters with a filter element ≤ 3um, so as to achieve a water purification system, improve water cleanliness, reduce pollution to product surfaces and stabilize product performance.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a wafer cutting liquid which is prepared from 100 of purified water, 3 of glycerin and 0.02 of silicate by weight proportion. By changing the essential component in the existing cutting liquid from soft water to the purified water, the invention reduces the component of hard ions in the cutting liquid so as to reduce the combination probability of soft ions and hard ions,and the formation probability of grains in the cutting liquid is greatly reduced.

Description

(1) Technical field [0001] The invention relates to a cutting fluid for a wafer cutting process flow of a chip-type passive surface acoustic filter, in particular to a wafer cutting fluid. (2) Background technology [0002] The existing wafer cutting fluid is prepared from soft water, glycerin and sodium silicate. The conductivity of the cutting fluid is 500us / cm to 1500us / cm, although it can meet the production of most products, but its conductivity is too high, it is easy to promote the combination of soft and hard ions in water to form large particles, thus polluting the cutting fluid . And when cutting some products, it is easy to carry the crystal debris after cutting, and stick to the surface of the product, causing slight pollution of the chip and causing product performance failure. (3) Contents of the invention [0003] Aiming at the above problems, the present invention provides a wafer cutting fluid with low electrical conductivity, which can reduce the pollut...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C10M173/00C10N30/04
Inventor 黄建平
Owner RF360 TECH (WUXI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap