Unlock instant, AI-driven research and patent intelligence for your innovation.

Manufacturing method of semiconductor device

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as not being widely used

Active Publication Date: 2012-02-01
TAIWAN SEMICON MFG CO LTD
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can meet its original design purpose, it cannot be widely used in various situations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The present invention will provide many different embodiments to implement different features of the present invention. The composition and configuration of each specific embodiment will be described below to simplify the present invention. These are examples and do not limit the present invention. In addition, "above", "on", "under" or "on" a first element formed on a second element may include that the first element is in direct contact with the second element in the embodiment, or may also include There are other additional elements between the first element and the second element so that the first element and the second element do not directly contact. Various elements may be shown in arbitrarily different scales for clarity and conciseness of the drawings. In addition, the present invention provides many embodiments of "gate last" metal gate process, however, one of ordinary skill in the art will know that these embodiments can also be applied to other processes ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a method for manufacturing a semiconductor device, comprising: providing a substrate having a first region and a second region, and forming a first gate stack on the first region and a second gate stack respectively. In the second region, the first gate stack includes a first dummy gate and the second gate stack includes a second dummy gate, the first dummy gate in the first gate stack is removed forming a first trench and removing the second dummy gate in the second gate stack to form a second trench, forming a first metal layer in the first and second trenches, removing the At least a portion of the first metal layer in the first trench, forming a second metal layer on the remainder of the first and second trenches, reflowing the second metal layer, and performing a chemical mechanical polishing. The present invention provides a simple and cost-effective method to form metal gates with appropriate work functions for NMOS and PMOS devices in a gate-last process, which can reduce costs and simplify processes.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, and in particular to a method for manufacturing a semiconductor device by gate-later technology. Background technique [0002] The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have resulted in successive generations of IC production, each with smaller and more complex circuits than the previous generation. However, these advances have also increased the complexity of the manufacturing IC process, so the IC process also needs to have the same progress in order to achieve a more advanced integrated circuit IC process. [0003] In the course of IC revolutions, functional density (ie, the number of interconnected devices per wafer area) has generally increased, while geometry size (ie, the smallest element or line that can be created in a process) has also increased. small. These downscalin...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L21/28
Inventor 林秉顺侯永田陈建豪陈启群
Owner TAIWAN SEMICON MFG CO LTD