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Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device

A bonding method and technology for silicon substrates, which are used in surface pretreatment bonding methods, electrical solid devices, electrical components, etc., can solve the problems of difficult high-strength and high-precision bonding, insufficient surface smoothness, etc. Reliable effect

Inactive Publication Date: 2010-03-31
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the smoothness of the surface obtained by such grinding treatment is not sufficient
Therefore, there is no gap between polished silicon substrates, and high-strength and high-precision bonding is difficult.

Method used

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  • Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
  • Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device
  • Method for joining silicon base materials, liquid droplet delivery head, liquid droplet delivery apparatus, and electronic device

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no. 1 approach 》

[0071] First, the first embodiment of the bonding method of the silicon substrate of the present invention will be described.

[0072] Figure 1 to Figure 3 It is a schematic diagram (longitudinal cross-sectional view) for explaining the 1st Embodiment of the joining method of the silicon base material of this invention, respectively. In addition, in the following description, the Figure 1 to Figure 3 The upper side of the middle is referred to as "upper", and the lower side is referred to as "lower".

[0073] The bonding method of the silicon substrate of the present invention is a method of bonding the surfaces of two silicon substrates (a first silicon substrate and a second silicon substrate) in direct contact with each other.

[0074] This method has the following steps: [1] a cleavage step (first step) of cleaving the first silicon base material, and [2] preparing a second silicon base material, and by cleaving the cleaved first silicon base material A bonding step (...

no. 2 Embodiment approach 》

[0163] Next, the second embodiment of the bonding method of the silicon substrate of the present invention will be described.

[0164] Figure 4 and Figure 5 It is a schematic diagram (longitudinal cross-sectional view) for explaining the second embodiment of the bonding method of the silicon substrate of the present invention. In addition, in the following description, the Figure 4 and Figure 5 The upper side of the middle is referred to as "upper", and the lower side is referred to as "lower".

[0165] Hereinafter, the second embodiment of the bonding method of silicon substrates will be described, focusing on the differences from the bonding method of silicon substrates of the first embodiment described above, and the description of the same matters will be omitted.

[0166] The bonding method of the silicon substrate of the present embodiment is the same as that of the above-described first embodiment except that the first step is different.

[0167] Hereinafter, e...

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Abstract

This invention provides a method for joining silicon base materials. The method comprises a first step of applying energy to a first silicon base material containing an Si-H bond to selectively cut the Si-H bond present along a face to be cleaved, and cleaving the first silicon base material by expansion pressure of the produced hydrogen gas to allow an unbonded hand of silicon to expose on the cleaved face, and a second step of bringing the cleaved face of the cleaved first silicon base material into contact with the surface of a second silicon base material with an unbonded hand of silicon exposed on its surface to join the first silicon base material to the second silicon base material.

Description

technical field [0001] The present invention relates to a bonding method of a silicon substrate, a droplet ejection head, a droplet ejection device, and an electronic device. Background technique [0002] Conventionally, as a method of bonding two silicon substrates (silicon base materials), there is known wafer direct bonding (Wafer Direct Bonding) in which wafers are directly bonded without using an adhesive. [0003] In the direct wafer bonding, for example, after cleaning two silicon substrates, a plurality of hydroxyl groups are adhered to the surfaces by surface-treating them respectively. Then, the bonding is performed by performing heat treatment at about 1000° C. while overlapping the silicon substrates. [0004] When the surfaces of the silicon substrates in which the hydroxyl groups are in close contact are superposed and heat-treated, Si—OH existing on the surfaces react to form Si—O—Si bonds. Thereby, the silicon substrates are firmly bonded. In this direct w...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23K20/00B81C3/00C04B37/00C30B29/06C30B33/06H01L21/02
CPCB41J2/1626B23K26/0635H01L25/50B23K2201/42B41J2/1634B81C2203/036B23K26/20B81B2201/052B23K2203/00H01L21/187H01L2224/48227B41J2/161C09J5/02B41J2/1623H01L2224/32145H01L2924/15311H01L2225/0651H01L2924/10253H01L2224/48091B81C3/001C09J2400/146H01L2924/1461B23K26/0624H01L2924/181B23K26/26B23K26/244B23K2101/42B23K2103/56Y10T156/10H01L2924/00014H01L2924/00H01L2924/00012B23K20/00C30B33/06B29C65/02
Inventor 佐藤充森义明
Owner SEIKO EPSON CORP