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Device for restraining pi mode oscillation of double-gap coupling cavity of multiple-beam klystron

A double-gap, coupled-cavity technology, applied in klystrons, electron tubes with velocity/density modulation electron flow, discharge tubes, etc., to achieve low efficiency and power-bandwidth characteristics, small outgassing, and suppression of high-order mode oscillations Effect

Inactive Publication Date: 2011-11-16
INST OF ELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology

[0003] To suppress the oscillation of multi-beam klystrons, an absorption cavity can be added to one of the resonant cavities in the double-gap coupling cavity, and the coupling can be performed through the coupling port, but only one high-order mode oscillation can be suppressed

Method used

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  • Device for restraining pi mode oscillation of double-gap coupling cavity of multiple-beam klystron
  • Device for restraining pi mode oscillation of double-gap coupling cavity of multiple-beam klystron
  • Device for restraining pi mode oscillation of double-gap coupling cavity of multiple-beam klystron

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Embodiment Construction

[0020] See Fig. 1 (a) and (b), for the device 24 of the present invention suppressing multi-injection klystron double-gap coupled cavity π mode oscillation, among the figure, coupling ring 11, absorbing cavity 12, microwave absorbing material 13, tuning screw 14 . One end of the hollow absorption cavity 12 is closed, and the other end has a longitudinal through hole. A rod-shaped Γ-shaped metal coupling ring 11 is arranged in the through hole. The inner end of the Γ-shaped coupling ring 11 is bent at right angles, and the inner end is welded and fixed to the inner wall of the absorption cavity 12 . On the side wall of the absorption cavity 12 opposite to the side wall of the inner end of the fixed coupling ring 11, there are two tuning screws 14 for axial sealing, one is opposite to the inner end of the coupling ring 11, and the other is located at the inner end of the coupling ring 11 Between the head and the closed end of the absorption chamber 12. A microwave absorbing ma...

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Abstract

The invention discloses a device for restraining pi mode oscillation of a double-gap coupling cavity of a multiple-beam klystron, and relates to the technology of microwave electro-vacuum devices. The device comprises a coupling ring, an absorption cavity, a microwave absorbing material and a tuning screw, wherein the inner side of the absorption cavity is coated with the microwave absorbing material and is provided with the coupling ring. The device can effectively restrain high-order mode oscillation with pi mode field distribution in a double-gap coupling cavity output circuit of the multiple-beam klystron and reduces noise spectrum level caused by the mode by selecting the shape and size of the absorption cavity, parameters of the coated material, and the position and size of the coupling ring. The device can restrain the pi mode oscillation of the multiple-beam klystron with the double-gap coupling cavity output circuit, and reduces the noise spectrum level.

Description

technical field [0001] The invention relates to the technical field of microwave electric vacuum devices, and is a device for suppressing the π-mode oscillation of a double-gap coupling cavity of a multi-beam klystron and reducing the level of stray spectrum. Background technique [0002] In order to expand the bandwidth of multi-beam klystrons, double-gap coupled cavities are usually used as broadband output circuits. Due to the internal feedback between the two resonant cavities of the double-gap coupling cavity output circuit, under certain conditions, it will cause high-order mode oscillation, so that the multi-beam klystron cannot work normally. In addition, under high-frequency excitation, due to the change of electron beam velocity or the existence of a small amount of inverted electrons and secondary electrons, high-order modes will be excited to form spurious spectra, which reduces the quality of the output spectrum and causes the output waveguide of the transmitter...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J23/00H01J25/10
Inventor 丁耀根丁海兵孙小欣
Owner INST OF ELECTRONICS CHINESE ACAD OF SCI
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