Unlock instant, AI-driven research and patent intelligence for your innovation.

High-speed mass memory based on flash memory and chip data management method

A large-capacity memory and memory technology, applied in the direction of electrical digital data processing, instruments, input/output to record carriers, etc., to achieve long service life, strong error correction ability, and improve real-time interactivity

Active Publication Date: 2012-05-23
雷智数系统技术西安有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of large-capacity and high-speed read data memory required in the existing military and industrial harsh environments, adopting a new design method, greatly improving the speed of data reading and writing, and more importantly, having data encryption And fast self-destruct function, with better confidentiality

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-speed mass memory based on flash memory and chip data management method
  • High-speed mass memory based on flash memory and chip data management method
  • High-speed mass memory based on flash memory and chip data management method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0034] Depend on figure 1 It can be seen that the present invention is composed of one main control board 1 and two memory boards 2, and the three circuit boards are connected by plate connectors 3 and interconnected by lamination. The main control board 1 is in the middle, and the two storage boards 2 are respectively located on both sides of the main control board 1 .

[0035] see figure 2 , the main control board 1 is composed of the following units: a PCIe communication interface management module, a read-write cache, a data management unit, an internal high-speed data bus, a channel cache, and a board-level communication interface management unit.

[0036] The PCIe communication interface management module is responsible for external communication management, and the read and write caches correspond to the user's read and write operation channels. The data management unit is responsible for distributing the data in the write cache to each channel buffer when writing; w...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a high-speed mass memory based on flash memory, comprising a master control board, a first storage board and a second storage board, wherein the first storage board and the second storage board are arranged on two sides of the master control board; the first storage board and the master control board are connected by a first board electrode connector, the master control board and the second storage board are connected by a second board electrode connector, and the first storage board, the master control board and the second storage board are mutually connected in a lamination mode. The invention has high interface transmission speed, greatly improves data real-time interactivity when users use, and has strong error correcting capability, long flash memory service life and data encryption function. The invention encrypts written-in data, increases the safety of data and has the advantage of quick data destroying function.

Description

technical field [0001] The invention relates to a high-speed and large-capacity memory, in particular to a high-speed and large-capacity memory based on flash memory. Background technique [0002] With the development of semiconductor technology, the manufacturing technology of flash memory chips is becoming more and more mature, and the capacity of a single chip is also increasing. Due to the advantages of flash memory itself, such as good vibration resistance, low power consumption, light weight, and resistance to high and low temperature harsh environments, more and more products use flash memory as the storage medium. Such as U disk, digital products, hard disk and so on. In the fields of industrial measurement and control, military industry and aerospace, due to the various advantages of flash memory, it is more suitable as a storage medium. At present, there are electronic hard disks based on flash memory as storage media. Standard-sized electronic hard disks are li...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F13/16
Inventor 刘升崔建杰李晓娟
Owner 雷智数系统技术西安有限公司