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Wiring structure of semiconductor device and method of forming a wiring structure

A wiring structure and bit line technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as landing pad failures, and achieve the effect of preventing electrical short circuits and preventing damage

Inactive Publication Date: 2010-06-16
SAMSUNG ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Also, failures due to misalignment of landing pads can occur

Method used

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  • Wiring structure of semiconductor device and method of forming a wiring structure
  • Wiring structure of semiconductor device and method of forming a wiring structure
  • Wiring structure of semiconductor device and method of forming a wiring structure

Examples

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Embodiment Construction

[0021] Various exemplary embodiments will be described more fully hereinafter with reference to the accompanying drawings, in which some exemplary embodiments are shown. However, the principles of this invention may be embodied in many different forms and should not be construed as limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this description will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0022] It will be understood that when an element or layer is referred to as being "on," "connected to," or "coupled to" another element or layer, it can be directly on or directly connected to the other element or layer. or coupled to another element or layer, or intervening elements or layers may also be present. In contrast, when an element is referred to as bei...

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Abstract

In a wiring structure of a semiconductor device and a method of manufacturing the same, a wiring structure includes a contact pad, a contact plug, a spacer and an insulation interlayer pattern. The contact pad is electrically connected to a contact region of a substrate. The contact plug is provided on the contact pad and is electrically connected to the contact pad. The spacer faces an upper side surface of the contact pad and sidewalls of the contact plug. The insulation interlayer pattern has an opening, the contact plug and the spacer being provided in the opening. The spacer of the wiring structure may prevent the contact pad from being damaged by a cleaning solution while forming a contact plug to be connected to a capacitor.

Description

technical field [0001] Exemplary embodiments of the present invention relate to a wiring structure of a semiconductor device and a method of forming the same. More particularly, exemplary embodiments of the present invention relate to a wiring structure of a semiconductor device capable of preventing electrical short between contact plugs and a method of forming the same. Background technique [0002] As memory cells of DRAM devices are more highly integrated, the side area of ​​each cell is greatly reduced. Therefore, it is important to form high capacitance capacitors in a reduced area. [0003] In order to increase the effective area of ​​electrodes included in the capacitor, various capacitor structures have been studied. Examples of capacitor structures include planar capacitors, stacked or trench capacitors, pillar capacitors, and the like. Pillar capacitors may require forming a relatively small area without touching each other. However, since the capacitor is ele...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/528H01L21/768H01L27/108
CPCH01L27/10888H01L27/10855H01L21/76831H01L21/76885H10B12/0335H10B12/485H01L21/28
Inventor 金伶厚洪昌基李在东
Owner SAMSUNG ELECTRONICS CO LTD
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