Method for smelting silicon carbide by single core furnace

A silicon carbide, single-core technology, applied in the field of smelting silicon carbide, can solve the problems of high energy consumption, low output and quality, and high control technology requirements, and achieve the effects of increasing product output, avoiding blindness, and reducing control technology requirements.

Inactive Publication Date: 2012-09-12
朱胜利
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

It overcomes the defects of low product yield and quality, high energy consumption and high control technology requirements brought about by the use of the plate-shaped core of the existing single-core furnace in the production of silicon carbide

Method used

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  • Method for smelting silicon carbide by single core furnace
  • Method for smelting silicon carbide by single core furnace
  • Method for smelting silicon carbide by single core furnace

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Embodiment Construction

[0021] In the method for smelting silicon carbide involved in the present invention, first, the furnace core 1 needs to be processed to form a central gasification zone I and a peripheral sintering zone II on the outer heat-conducting surface of the furnace core 1; secondly, in order to ensure that the furnace core 1 forms a central gas The thickness H of the gasification zone in the center of the furnace core is greater than the thickness M of the two sides of the furnace core in the sintering zone I and the surrounding sintering zone II; finally, the two ends of the furnace core 1 are heated with electrodes until the gasification zone I in the center of the furnace core 1 occurs. The phenomenon of gasification and evaporation is used to reach the required temperature, and then the reaction materials are fully reacted in the furnace to be smelted into silicon carbide.

[0022] In order to improve the smelting effect, the thickness H of the gasification zone in the center of th...

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Abstract

The invention relates to a method for smelting silicon carbide by a single core furnace, which overcomes the defects of low yield and quality of product, large energy consumption and high requirement on control technique in the production of silicon carbide by using a tabular body furnace core of the current single core furnace. The method comprises the following steps that: 1) the furnace core is processed to form a central gasification area and a peripheral sintering area on an external heat-conducting surface of the furnace core; 2) the thickness of the central gasification area of the furnace core is larger than the thickness of two sides of the furnace core; and 3) two ends of the furnace core are electrified via electrodes in order to be heated until gasification and vaporization are formed in the central gasification area of the furnace core, thereby sufficiently smelting silicon carbide. The method has the advantage of being capable of enhancing the yield and the quality of product while lowering energy consumption and requirement on control technique in the smelting production of silicon carbide.

Description

technical field [0001] The invention relates to a method for smelting silicon carbide, in particular to a method for smelting silicon carbide using a single-core furnace. Background technique [0002] In the silicon carbide smelting industry at home and abroad, single-core furnaces or multi-core furnaces are basically used at present. The core of the single-core furnace is mainly a square core with a square cross-section, a cylindrical core with a circular cross-section, and a plate-shaped core with a rectangular cross-section; the multi-core furnace mainly has a front The double-core furnace of the Soviet Union, the three-core furnace of Germany and the double-core furnace of our country. In fact, no matter what kind of furnace core is used, the purpose is to increase product output and quality, reduce energy consumption, difficulty in furnace installation, control technical requirements, possibility of furnace spraying accidents, etc. Weighing the advantages and disadvan...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B31/36
Inventor 朱胜利
Owner 朱胜利
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