Resistivity measuring device and method

Abstract

The invention discloses resistivity measuring device and method. The resistivity of a semiconductor material is measured by utilizing eddy current change. The device comprises a primary coil and a secondary coil, wherein the primary coil is formed by connecting a first measuring coil and a first balancing coil in series; the secondary coil is formed by reversely connecting a second measuring coil and a second balancing coil in series; the primary coil is connected with the power output end of a sine-wave generator; and the secondary coil is connected with a measuring circuit. When sine current passes through the primary coil, an alternating magnetic field is generated, and vortex is generated in a sample; voltage V is generated on the secondary coil, and the voltage V is formed by superposing voltage V1 and voltage V2, wherein the voltage V1 is induced by the alternating magnetic field of the primary coil and the voltage V2 is induced by an eddy current magnetic field in the sample; the V1 is eliminated by synchronous detection; after parameters such as the geometric dimension, the distance and the like of the device are determined, the product rho V2 of the resistivity rho of the sample and the measured eddy voltage V2 is a constant; and after the device is corrected by the sample with a known resistivity in advance, the rho value can be measured by measuring the V2.

Description

technical field [0001] The invention relates to a measuring device, in particular to a resistivity measuring device and method. Background technique [0002] The current measurement of resistivity of semiconductor parts mostly adopts contact measurement, which is usually carried out by means of four-terminal electrodes. When the sample volume of semiconductor parts to be tested is small or the resistivity is very low, it will A large error occurs, that is, the measured resistivity will be significantly higher than its actual resistivity value. On the other hand, the measuring electrode and the surface of the test sample for contact measurement are easily polluted and form oxides, which makes it difficult to have a good contact between the semiconductor part sample and the electrode to be tested, and will further increase the measurement error. Contents of the invention [0003] In view of the problems existing in the above-mentioned prior art, an embodiment of the present...

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Problems solved by technology

[0002] The current measurement of resistivity of semiconductor parts mostly adopts contact measurement, which is usually carried out by means of four-terminal electrodes. When the sample volume of semiconductor parts to be tested is small or the resistivity is very low, it will There is a large error, that is, the measured resistivity will be significantly higher than its actual resistivity value

On the other hand, the measuring electrode and the surface of the test sample in contact measurement are easily polluted and form oxides, which makes it difficult to have good contact between the semiconductor part sample and the electrode to be tested, and will further increase the measurement error

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