Bridgman-method single crystal production device with integrated environment maintenance
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- 江苏南田工机有限公司
- Publication Date
- 2010-08-11
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Abstract
Description
Technical field
[0001] The invention relates to a single crystal production device with a crucible descending method for integrated and integrated environmental maintenance, which belongs to the field of C30B single crystal growth. Background technique
[0002] The crucible descending single crystal growth method is a commonly used single crystal growth method. The material used for single crystal growth is placed in a cylindrical crucible, slowly lowered, and passed through a heating furnace with a certain temperature gradient, and the furnace temperature is controlled slightly higher than the melting point of the material. According to the nature of the material, the heating device can be a resistance furnace or a high frequency furnace. When passing through the heating zone, the material in the crucible is melted. When the crucible continues to fall, the temperature at the bottom of the crucible first drops below the melting point and begins to crystallize. The single crystal...