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InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure

A technology of electrical detectors and superlattices, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as application limitations and high cost

Active Publication Date: 2010-08-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the most commonly used silicon-doped detectors, InSb, QWIP, MCT and other infrared detectors are required to work at low temperatures, require special refrigeration equipment, and are expensive, so their applications are limited.

Method used

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  • InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure
  • InAs/GaSb superlattice infrared photoelectric detector for HPT (Hydrogenated Propylene Tetramer) structure

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Embodiment Construction

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Abstract

The invention relates to an InAs / GaSb superlattice infrared photoelectric detector for an HPT (Hydrogenated Propylene Tetramer) structure, which comprises a GaSb substrate, a top electrode and a bottom electrode, wherein a GaSb buffer layer, a GaSb collecting region, a InAs / GaSb superlattice base region, a AlGaAaSb base region, a AlGaAaSb emitting region and a GaSb covering layer are respectively prepared on the GaSb substrate by using a molecular beam epitaxy method; the top electrode is prepared on the surface of the GaSb covering layer by using a sputtering method, and a light entrance port is arranged in the center of the top electrode; and the bottom electrode is prepared on the lower surface of the GaSb substrate by using a sputtering method.

Description

InAs / GaSb superlattice infrared photodetector with HPT structure technical field The invention relates to semiconductor technology, mainly an InAs / GaSb superlattice infrared detector with HPT structure grown on a GaSb substrate. Background technique With the advancement of science and technology, infrared detectors with military use as the core have gradually developed. Atmospheric monitoring and other military and civilian fields have a wide range of applications. However, the most commonly used silicon-doped detectors, InSb, QWIP, MCT and other infrared detectors are required to work at low temperatures, require special refrigeration equipment, and are expensive, so their applications are limited. The InAs / GaSb infrared detector is due to the particularity of its materials, for example: the high effective mass of electrons and holes can effectively reduce the tunneling current and increase the density of states; the energy difference between the heavy hole band and the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/11
Inventor 张宇王国伟汤宝任正伟徐应强牛智川陈良惠
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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