Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Photoelectric avalanche diode for sensing front end of intelligent high-sensitivity optocoupler isolation chip

An avalanche diode and optocoupler isolation technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of the speed effect of avalanche photodiodes, and achieve good photoelectric detection performance indicators, large bandwidth, and high sensitivity.

Pending Publication Date: 2020-06-23
WUXI HAOBANG HIGH TECH CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Slow diffusing photogenerated carriers in the substrate as well as parasitic capacitance can negatively affect the speed of the avalanche photodiode

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoelectric avalanche diode for sensing front end of intelligent high-sensitivity optocoupler isolation chip
  • Photoelectric avalanche diode for sensing front end of intelligent high-sensitivity optocoupler isolation chip
  • Photoelectric avalanche diode for sensing front end of intelligent high-sensitivity optocoupler isolation chip

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0050] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on The embodiments of the present invention and all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0051] Such as Figure 5 As shown, a photoelectric avalanche diode used for the front-end sensor of an intelligent high-sensitivity optocoupler isolation chip is designed using a standard CMOS process and does not require any special custom processes or special substrates and materials. It is mainly used for infrared and visible light (300nm to 950nm) wavelength photodetection system.

[0052] The photoelectric avalanche diode used for the sens...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to a photoelectric avalanche diode for a sensing front end of an intelligent high-sensitivity optocoupler isolation chip. The photoelectric avalanche diode is characterized by comprising a base plate; the base plate is internally provided with a deep N well, a first P well and a second P well; the cross section of the deep N well is E-shaped, and the deep N well comprises a transverse section at the bottom and three vertical sections extending upwards from the transverse section; the three vertical sections are a first vertical section, a second vertical section and a third vertical section from left to right respectively; the first P well is positioned between the first vertical section and the second vertical section; and the second P well is positioned between thesecond vertical section and the third vertical section. The photoelectric avalanche diode is compatible with a standard CMOS process, can be integrated with a CMOS circuit, and can be used in a photoelectric detection system of infrared and visible light (300 nm to 950 nm) wavelengths; and the photoelectric avalanche diode is compatible with the CMOS process, and meanwhile, realizes relatively high internal gain and achieves good photoelectric detection performance indexes, and has the advantages of small size, high sensitivity, high response speed, large bandwidth and the like.

Description

technical field [0001] The invention relates to a photoelectric avalanche diode used for the sensing front end of an intelligent high-sensitivity optocoupler isolation chip. Background technique [0002] Photodiodes can be used to detect light signals and are used in photometers in cameras, smoke detectors, and various optical communication devices. All types of photodiodes can be used to detect bursts of light, or to detect luminescence within the same circuitry. Photodiodes are often combined with light-emitting devices (usually light-emitting diodes) to form a module, which is often called a photocoupler. This makes it possible to analyze the movement of external mechanical elements (such as light choppers) by analyzing the received light. Another function of the photodiode is to act as an intermediary between the analog circuit and the digital circuit, so that the two circuits can be coupled through optical signals, which can improve the safety of the circuit. In scie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/107H01L31/0352
CPCH01L31/035272H01L31/107
Inventor 姜岩峰全庆霄王辉王嫚
Owner WUXI HAOBANG HIGH TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products