Method for modifying chips by using electron beam radiation
An electron beam radiation and chip technology, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of poor product uniformity, device failure, and long switching time parameters of wafer chips, and achieves simple process and cost saving. Effect
Inactive Publication Date: 2012-03-28
余姚市顺诚电子加速器技术服务有限公司
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Problems solved by technology
The disadvantage is that due to the complexity of the existing process technology, the chip is affected by materials, processes, and the environment during the production process, which makes the switching time parameters of the wafer chip too long or inconsistent, resulting in failure of the device on the entire circuit
Many chip manufacturers at home and abroad generally use gold-doped technology to control product quality, but due to technical problems, the use of this technology has the disadvantages of poor process control, poor uniformity, high cost and low yield.
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Embodiment Construction
[0022] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0023] Such as figure 1 As shown, a method for modifying a chip by electron beam radiation of the present invention comprises the following steps:
[0024] Step 1 Measure the switching time t of the chip to be modified s The average value of the maximum and minimum values of , the average value is divided into one category at intervals of 0.3 μs.
[0025] Step 2 selects the radiation dose D of radiation modification. In the present invention, the radiation dose is selected between 0.1 to 2.5KGy (Gy=Gray), and the scanning magnet on the electron accelerator ensures that the radiation dose absorbs uniformity s Value to choose, generally the switching time before radiation t s0 and the switching time t after radiation s Difference Δt=t s -t s0 As a benchmark, the radiation dose D used is increased by 0.1KGy for every 0.3μs increase in Δt. The relat...
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The invention provides a method for modifying chips by using electron beam radiation. The method comprises the following steps of: 1, classifying the chips according to the switching time of different chips; 2, selecting the radiation dosage of radiation modification; 3, adjusting the parameter of an electron accelerator; 4, adjusting the conveying speed of a conveyor belt according to a relationbetween the radiation dosage and the conveying speed of the conveyor belt so as to adjust the radiation dosage; 5, performing batch radiation on the chips by using the electron accelerator; 6, performing sampling inspection on the radiated chips and judging whether the electrical parameters of the chips are qualified or not; and 7, annealing the chips. Compared with the prior art, the method for modifying the chips by using the electron beam radiation can be used for modifying the chips by certain dosage of electron beams with certain energy produced by the electron accelerator and has the advantages of simple process, high product percent of pass and low cost.
Description
technical field [0001] The invention relates to an application of atomic energy technology and a method in the field of semiconductor device manufacturing technology, in particular to a method for modifying a chip by electron beam radiation. Background technique [0002] At present, the manufacturing process of traditional chips (diodes, triodes, field effect transistors, etc.) can be roughly divided into wafer material processing, wafer chip manufacturing process, wafer testing process, wafer thinning, back metallization process, wafer Scribing process and dozens of steps. The general basic steps of the wafer manufacturing process are to properly clean the wafer first, then oxidize the surface, and then repeat the coating, exposure and development, etching and chemical vapor deposition, ion implantation, boron phosphorus diffusion, aluminum evaporation, surface passivation, etc. Chemical and other processes, and finally complete several layers of circuits and components on...
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IPC IPC(8): H01L21/263H01L21/66
Inventor 施惠栋沈军渭孙创成
Owner 余姚市顺诚电子加速器技术服务有限公司