Chemically-mechanical polishing solution

Abstract

The invention discloses chemically-mechanical polishing solution. The chemically-mechanical polishing solution contains grinding particles and water, and also contains at least one nitrogen-containing compound with an annular structure. In the polishing solution of the invention, the rate of growth, with time, of the particle sizes of the grinding particles is reduced. The chemically-mechanical polishing solution of the invention has relatively higher stability, relatively longer storage time and relatively longer service life.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid. Background technique [0002] In the field of chemical mechanical polishing (CMP) in the semiconductor industry, the chemical mechanical polishing fluids used are mainly divided into acidic and alkaline slurries. Among them, the stability of alkaline slurry is relatively good, but there is no suitable oxidizing agent, and the problems of surface cloud point and slight scratches are easily caused during the polishing process. Acid slurry shows certain advantages in this respect. However, the size of the abrasive particles in the acidic slurry will gradually grow under the action of the chemical components in the slurry as the storage time prolongs. When the particle size is greater than 120 nanometers, phenomena such as sedimentation and stratification will occur, which will seriously affect the polishing quality and cause product failure. Therefore, controlling the growth of abrasive pa...

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a chemical mechanical polishing liquid with higher stability in order to overcome the low storage stability of the acidic chemical mechanical polishing liquid in the prior art.

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