Semiconductor element and manufacturing method thereof

Abstract

The invention relates to a semiconductor element and a manufacturing method thereof. The semiconductor element comprises a base, a grid structure, doped zones and soft doped zones. The base has a step-shaped upper surface, wherein the step-shaped upper surface comprises a first surface, a second surface and a third surface; the second surface is lower than the first surface; the third surface is connected to the first and the second surfaces; the grid structure is arranged on the first surface; the doped zones are arranged in the base at two sides of the grid structure and located below the second surface; the soft doped zones are respectively arranged in the base between the grid structure and the doped zones, and each soft doped zone comprises a first part and a second part which are connected to each other, wherein the first part is arranged below the second surface and the second part is arranged below the third surface. The semiconductor element employs the inclined and bent softdoped zones as a source electrode and a drain electrode for extending, beneficial to lightening hot carrier effect without reducing dopant concentration of the soft doped zones, and capable of decreasing leakage current of the drain electrode caused by the grid and overlap capacitance between the grid and the drain electrode.

Description

technical field [0001] The present invention relates to a semiconductor element and a manufacturing method thereof, in particular to a metal oxide semiconductor (MOS) transistor and a manufacturing method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing process technology, in order to increase the speed and performance of components, the size of the entire circuit components must be continuously reduced, and the integration level of components must also be continuously improved. Under the trend of higher and higher requirements for component integration, it is necessary to take into account changes in component characteristics such as leakage current, hot carrier effect (hot carrier effect) or short channel effect (short channel effect, SCE). Avoid seriously affecting the reliability and performance of the integrated circuit. [0003] Taking metal oxide semiconductor transistors as an example, figure 1 It is a schematic cross...

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Problems solved by technology

In addition, when a stress layer is formed on the substrate 100, the thick spacer 104 tends to cause the stress layer to be far away from the channel region, thus reducing the effect of the stress layer on carrier mobility.

[0005] It can be seen that the above-mentioned existing semiconductor element and its manufacturing method obviously still have inconvenience and defects in structure and use, and need to be further improved urgently.

In order to solve the a

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