Large area nanopatterning method and apparatus

A technology of nano-patterning and equipment, applied in the field of large-area nano-patterning and equipment

Inactive Publication Date: 2010-12-08
罗利诗公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the use of SAMs as "inks" for sub-100nm patterning is problematic due to the drift of molecules on the surface, and the use of SAMs as "inks" for large-area applications has not been experimentally demonstrated.

Method used

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  • Large area nanopatterning method and apparatus
  • Large area nanopatterning method and apparatus
  • Large area nanopatterning method and apparatus

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Embodiment Construction

[0049] As a prelude to the detailed description, it should be noted that as used in this specification and the claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise.

[0050] When the word "about" is used herein, it is meant to mean within ±10% of the stated nominal value.

[0051] Embodiments of the invention relate to methods and apparatus useful in nanopatterning of large area substrates, where masks are used to image radiation sensitive materials. Usually a rotating mask contains a cylinder. Nanopatterning techniques utilize near-field lithography, where the wavelength of radiation used to image a radiation-sensitive layer on a substrate is 438 nm or shorter, and where a mask used to pattern the substrate is in contact with the substrate. Near-field lithography can utilize phase-shift masks, or utilize nanoparticles on the surface of a transparent cylinder of rotation, or can employ plasmonic techniques wher...

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Abstract

Embodiments of the invention relate to methods and apparatus useful in the nanopatterning of large area substrates, where a rotatable mask is used to image a radiation- sensitive material. Typically the rotatable mask comprises a cylinder. The nanopatterning technique makes use of Near-Field photolithography, where the mask used to pattern the substrate is in dynamic contact with the substrate. The Near-Field photolithography may make use of an elastomeric phase-shifting mask, or may employ surface plasmon technology, where a rotating cylinder surface comprises metal nano holes or nanoparticles.

Description

technical field [0001] Embodiments of the invention relate to nanopatterning methods that can be used to pattern large substrates or substrates, such as films that can be sold as rolled goods. Other embodiments of the invention relate to apparatus that can be used to pattern a substrate and that can be used to perform method embodiments, including the described method embodiments. Background technique [0002] This section describes background topics related to the disclosed embodiments of the invention. There is no intention, expressed or implied, that the background art described in this section legally constitutes prior art. [0003] Nanostructuring is essential to many current applications and industries, and to new technologies that are being developed. For example and not limitation, improvements in power efficiency may be achieved for current applications in the field of, for example, solar cells and LEDs, as well as in next generation data storage devices. [0004...

Claims

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Application Information

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IPC IPC(8): H01L21/027
CPCB29C33/424G03F7/24G03F7/2014G03F1/14G03F1/60G03F7/20G03F1/50G03F1/62H01L21/0274
Inventor B·柯宾I·兰道B·沃尔夫
Owner 罗利诗公司
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