Large area nanopatterning method and apparatus
A technology of nano-patterning and equipment, applied in the field of large-area nano-patterning and equipment
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[0049] As a prelude to the detailed description, it should be noted that as used in this specification and the claims, the singular forms "a," "an," and "the" include plural referents unless the context clearly dictates otherwise.
[0050] When the word "about" is used herein, it is meant to mean within ±10% of the stated nominal value.
[0051] Embodiments of the invention relate to methods and apparatus useful in nanopatterning of large area substrates, where masks are used to image radiation sensitive materials. Usually a rotating mask contains a cylinder. Nanopatterning techniques utilize near-field lithography, where the wavelength of radiation used to image a radiation-sensitive layer on a substrate is 438 nm or shorter, and where a mask used to pattern the substrate is in contact with the substrate. Near-field lithography can utilize phase-shift masks, or utilize nanoparticles on the surface of a transparent cylinder of rotation, or can employ plasmonic techniques wher...
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Abstract
Description
Claims
Application Information
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