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Optical proximity correction figure for enhancing figure fidelity of Si/Ge emitter window

An optical proximity correction and emitter technology, which is applied in the photoplate making process of optics, pattern surface, and originals for opto-mechanical processing, etc., can solve problems such as unsatisfactory effect and poor fidelity, and improve Graphical fidelity, reduced cutoff frequency, and effects of changes in magnification factor

Active Publication Date: 2010-12-22
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing optical proximity correction methods often correct by adding additional graphics, the effect is not satisfactory, especially when the size is reduced, the fidelity is worse

Method used

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  • Optical proximity correction figure for enhancing figure fidelity of Si/Ge emitter window
  • Optical proximity correction figure for enhancing figure fidelity of Si/Ge emitter window
  • Optical proximity correction figure for enhancing figure fidelity of Si/Ge emitter window

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Embodiment Construction

[0032] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0033] The invention provides an optical proximity correction pattern for improving the fidelity of the Si / Ge emitter window pattern, mainly using a series of small hole patterns to form the Si / Ge emitter window layout, and using smaller rectangles to generate corner rounding (corner rounding) The smaller the radius of curvature, the optical proximity effect principle, and the principle that the image cannot be imaged if the pitch is too small, the larger rectangle is split into small holes, the corner rounding is smaller after exposure, and the graphics are closer to the layout, while the middle After exposure, the separated area will have insufficient resolution, and the side lobe (side lobe, side lobe) effect will occur on the edge of the small hole when the hole is overexposed, resulting in the principle of pattern adhesion, so that it will...

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Abstract

The invention discloses an optical proximity correction figure for enhancing the figure fidelity of a Si / Ge emitter window. The figure consists of two end parts and a middle part, wherein the two end parts have the same size and are split into two structures with small holes at a certain interval respectively; the middle part is a totally-rectangular structure or split into two rectangles at a certain interval; and a certain distance exists between the two end parts and the middle part. The figure fidelity of the emitter window in a Si / Ge apparatus can be enhanced, so that the variations of a cutoff frequency and an amplification factor of the Si / Ge apparatus caused by the shape variation of the emitter window are reduced.

Description

technical field [0001] The invention belongs to the field of manufacturing technology of Si / Ge devices in semiconductor manufacturing, and in particular relates to optical proximity correction patterns in the lithography process of Si / Ge devices, in particular to an optical proximity correction for improving the fidelity of Si / Ge emitter window patterns graphics. Background technique [0002] Based on Si / Ge (Si / Ge refers to Si x Ge 1-x The semiconductor device of the alloy) compound uses the characteristics that the Si / Ge energy band gap is smaller than that of Si and is compatible with the Si integrated circuit process. It is suitable for manufacturing semiconductor devices with high integration, high speed and easy compatibility with Si semiconductor devices. It is widely used Used in high-speed communication field. [0003] In Si / Ge devices, Si / Ge is generally used as the base region, polysilicon is used as the emitter, and the doped substrate is used as the collector....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/14G03F1/36
Inventor 王雷
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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