Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon wafer thickness measuring method

A thickness measurement, silicon wafer technology, applied in the direction of measuring devices, instruments, etc., can solve the problems of operator hazards, energy consumption, etc., and achieve the effect of avoiding hazards and saving energy

Inactive Publication Date: 2011-04-06
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since this measurement method needs to use a light source, it will consume a certain amount of energy, and the radiation generated by lasers will cause certain harm to operators.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon wafer thickness measuring method
  • Silicon wafer thickness measuring method
  • Silicon wafer thickness measuring method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0017] Aiming at the problems existing in the prior art, a method for measuring the thickness of a silicon wafer is proposed in the present invention, that is, the functional relationship between the thickness and weight of the silicon wafer is determined in advance, and then, when the thickness of a certain silicon wafer needs to be measured , first measure the weight of the silicon wafer, and then use the determined functional relationship and the measured weight of the silicon wafer to calculate the thickness of the silicon wafer.

[0018] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0019] figure 1 It is a flowchart of a method embodiment of the present invention. Such as figure 1 shown, including the following steps:

[0020] Step 11: Select a predetermined number of silicon wafers, measure the t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a silicon wafer thickness measuring method. A functional relation between the thickness and weight of a silicon wafer is determined in advance; when the thickness of any silicon wafer needs to be measured, the method comprises the following steps: measuring the weight of the silicon wafer; and calculating the thickness of the silicon wafer according to the determined functional relation and the measured weight of the silicon wafer. Through the method of the invention, energy sources can be saved; and the method is safe and reliable and can ensure that the measuring operation is always normally performed.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a method for measuring the thickness of a silicon wafer. Background technique [0002] In the existing technology, in order to ensure that the performance of the machine in actual use can meet the requirements, it is usually necessary to test the performance of the machine before use. For example, if the function of a certain machine is to be able to grow a layer of oxide with a thickness of 10 nanometers (nm) on the surface of a silicon wafer, then, before actually using the machine, a test silicon wafer, or called a control wafer ( control wafer), the machine is tested, the specific test method is: use the machine to grow a layer of oxide on the surface of the control sheet, after the growth is completed, measure whether the thickness of the oxide on the control sheet meets the requirements, if it meets, It shows that the performance of the machine meets the requiremen...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01B21/08
Inventor 简志宏王志高史萌
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com