Method for forming contact hole and method for forming contact plug

A technology of contact hole and etching stop layer, which is applied in the formation of contact plugs and the field of contact hole formation, can solve the problems of poor resistance distribution characteristics of contact plugs, and achieve improved resistance distribution characteristics, increased free path, physical and chemical The effect of enhancing the ability to act

Active Publication Date: 2011-04-06
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The problem solved by the invention is how to improve the problem of poor resistance distribution characteristics of the contact plug connected to the N-type active region

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  • Method for forming contact hole and method for forming contact plug
  • Method for forming contact hole and method for forming contact plug
  • Method for forming contact hole and method for forming contact plug

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Embodiment Construction

[0038] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0039] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0040] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The invention provides a method for forming a contact hole and a method for forming a contact plug. The method for forming the contact hole comprises the following steps of: providing a semiconductor substrate, wherein a device layer is formed on the semiconductor substrate, an etch stop layer is formed on the device layer, a metal front dielectric layer is formed on the etch stop layer, and a mask layer with a contact hole pattern is formed on the metal front dielectric layer; and a metal silicide layer is formed on the surface of an active region of the device layer; etching the metal frontdielectric layer under the shielding of the mask layer to expose the etch stop layer; and removing the etch stop layer to form the contact hole, wherein the step of removing the etch stop layer comprises the steps of etching by using first pressure to substantially remove the etch stop layer and etching by using second pressure to promote impurity volatilization on the surface of the metal silicide layer; and the first pressure is greater than the second pressure. By the method, the resistance distribution characteristic of the contact plug connected with an N-type active region can be improved, and the device performance is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a contact hole and a method for forming a contact plug. Background technique [0002] In the integrated circuit manufacturing process, in order to connect the underlying CMOS and other semiconductor devices with the upper metal interconnection layer, it is generally necessary to etch a contact hole in the pre-metal dielectric layer between the first metal interconnection layer and the semiconductor device layer. , and then fill the contact hole with metal such as tungsten, aluminum or copper to form a contact plug (contact). [0003] Usually the above-mentioned contact plugs are formed through the following process: first, the contact hole is etched in the pre-metal dielectric layer to expose the metal silicide contact layer on the surface of the active region, and then the chemical vapor deposition technique (Chemical Vapor Deposition, CV...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768
Inventor 韩秋华韩宝东
Owner SEMICON MFG INT (SHANGHAI) CORP
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