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Voltage reference circuit

A technology of voltage reference and reference voltage source, which is used in the protection of overvoltage response, adjustment of electrical variables, instruments, etc., can solve the problems of inability to realize automatic circuit protection, slow start-up speed, etc., and achieve simple structure and fast start-up speed. , to achieve the effect of automatic protection

Active Publication Date: 2011-04-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0005] The zero temperature drift voltage of the traditional bandgap reference voltage source is fixed at about 1.2 volts. It is mainly used as a reference for other circuit parts, and the startup speed is slow, and the reference voltage output by the bandgap reference voltage source will not be turned off even if it is too high. , cannot realize the automatic protection of the circuit

Method used

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Embodiment Construction

[0022] An embodiment of the voltage reference circuit of the present invention is as figure 2 As shown, it includes three parts: one is the standard bandgap reference voltage source 20 for realizing zero temperature coefficient; the other is the start-up and overvoltage protection circuit 21 of the bandgap reference voltage source;

[0023] Two embodiments of the bandgap reference voltage source 20 are image 3 , Figure 4As shown, it includes a MOS tube bias current mirror part, a proportional bipolar transistor (BJT) part of the same type, an operational amplifier 1, matching resistors, and the like. The bipolar transistor part of the same type ratio includes the first BJT transistor T1, the second BJT transistor T2, and the first resistor R1, wherein the effective emission area of ​​the first BJT transistor T1 is N times that of the second BJT transistor T2, and N>1 , the first BJT transistor T1 and the second BJT transistor T2 are connected into a PN structure, the MOS ...

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Abstract

The invention discloses a voltage reference circuit. On the basis of the conventional common band gap reference voltage source circuit structure, a fixed bias circuit and a starting and over-voltage protection circuit are arranged; monoploid bipolar transistor base emitter PN junction voltage VBE and diploid bipolar transistor base emitter PN junction voltage 2VBE are realized in the fixed bias circuit; comparison control between the bipolar transistor base emitter PN junction voltage and reference voltage output by a band gap reference voltage source is realized through the starting and over-voltage protection circuit, so the output reference voltage during the normal work of the band gap reference voltage source is defined in a safe range; when the output reference voltage is over-high,automatic protection of the circuit can be realized; and the circuit has a simple structure and is suitable to be manufactured by the various bipolar transistor and metal oxide field effect transistor compatible processes.

Description

technical field [0001] The invention relates to a power supply circuit, in particular to a voltage reference circuit. Background technique [0002] The most classic voltage reference circuit in power management integrated circuits is the bandgap reference voltage source. The principle of the bandgap reference voltage source is to use the base-emitter PN junction voltage V of the bipolar transistor (BJT) BE Negative temperature coefficient and equivalent thermal voltage V T The positive temperature coefficients cancel each other out for a zero-drift voltage reference. The traditional bandgap reference voltage source Vbg is generally composed of V BE +kV T Two parts, V BE is a negative temperature coefficient of approximately -2mV / °C, while V T is a positive temperature coefficient of about 0.086mV / °C, V BE About 0.7V, plus k times (k>1) equivalent thermal voltage V T , V T And the difference between the base-emitter PN junction voltage of the proportional BJT tube...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G05F3/30H02H3/20
Inventor 崔文兵
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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