Unlock instant, AI-driven research and patent intelligence for your innovation.

Nonvolatile semiconductor memory including a power failure circuit that refreshes written data in response to a power failure signal

A non-volatile, power failure technology, used in information storage, static memory, read-only memory, etc., to solve problems such as loss of written data

Active Publication Date: 2015-08-19
WESTERN DIGITAL TECH INC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if a power failure occurs after performing a large number of single-sector write operations but before issuing a refresh command, the write data buffered in the data register 26 may be lost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nonvolatile semiconductor memory including a power failure circuit that refreshes written data in response to a power failure signal
  • Nonvolatile semiconductor memory including a power failure circuit that refreshes written data in response to a power failure signal
  • Nonvolatile semiconductor memory including a power failure circuit that refreshes written data in response to a power failure signal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0014] Figure 2A A nonvolatile semiconductor memory 28 including a first memory device 30A is shown, which has a memory array 32 including a plurality of memory segments and a data register 34 for when write data is written to one of the memory segments Store written data before. Memory controller 36 includes a microprocessor 38 that executes access commands received from host 40 . Interface circuit 42 generates control signals that enable microprocessor 38 to communicate with first memory device 30A. Power fail circuit 44 transmits a refresh command via interface circuit 42 to first memory device 30A in response to power fail signal 46, wherein first memory device 30A responds to the refresh command by transferring the write data stored in data register 34A to the memory segment .

[0015] Non-volatile semiconductor memory 28 may include any suitable configuration of memory controller 36 and memory device 30A. In one embodiment, memory device 30A includes suitable flash ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A non-volatile semiconductor memory is disclosed comprising a first memory device having a memory array including a plurality of memory segments, and a data register for storing write data prior to being written to one of the memory segments. A memory controller comprises a microprocessor for executing access commands received from a host. Interface circuitry generates control signals that enable the microprocessor to communicate with the first memory device. Power fail circuitry transmits a flush command to the first memory device through the interface circuitry in response to a power fail signal, wherein the first memory device responds to the flush command by transferring the write data stored in the data register to the memory segment.

Description

technical field Background technique [0001] Non-volatile semiconductor memory can be used as a mass storage device for computer systems (eg, desktop, laptop, portable computers, etc.) or consumer devices (eg, music players, mobile phones, cameras, etc.) or other suitable appliances. A nonvolatile semiconductor memory may include one or more storage devices such as flash memory and a control circuit to access each storage device. Each memory device is coupled to an I / O (input / output) bus and a number of interface control lines. When a program command or an erase command is issued to a memory device, the control circuit communicates address and command data (and write data for program operations) over the I / O bus. When issuing a read command, the control circuit transmits the address and command data through the I / O bus and then receives the read data through the I / O bus. [0002] figure 1 A prior art non-volatile semiconductor memory 2 is shown communicating with a host 4 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
CPCG11C16/22
Inventor A·C·坎恩
Owner WESTERN DIGITAL TECH INC