Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for manufacturing electric conduction plug

The technology of a conductive plug and manufacturing method, which is applied in the field of semiconductor chip manufacturing, can solve problems such as short circuit between the conductive plug and the grid conductive layer

Inactive Publication Date: 2013-03-13
SEMICON MFG INT (SHANGHAI) CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In order to solve the problem that a relatively large part of the conductive plug is short-circuited with the gate conductive layer in the prior art, the present invention provides a method for manufacturing the conductive plug

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for manufacturing electric conduction plug
  • Method for manufacturing electric conduction plug
  • Method for manufacturing electric conduction plug

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] In order to make the content and protection scope of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0022] Combine the following Figure 2a-Figure 2d , the method of manufacturing the conductive plug of the present invention will be described.

[0023] The manufacturing method of conductive plug of the present invention comprises:

[0024] First, provide a substrate for fabricating conductive plugs, refer to Figure 2a As shown, the substrate includes: a first conductive layer 200, a passivation layer 201 on the first conductive layer 200, a gate insulating layer 203 on the passivation layer 201, a gate conductive layer on the gate insulating layer 203 202, the first oxide layer 110 located on the upper side of the gate conductive layer 202, the gate nitride layer 204 surrounding the first oxide layer and the gate conductive layer 202, the f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for manufacturing an electric conduction plug. In the method, pre-wet solution is coated on an anti-reflection layer, and then optical resist is formed on the anti-reflection layer, so that the formed electric conduction plug has a large depth-to-width ratio, and the electric conduction plug and a conducting layer are hardly short-circuited.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing, in particular to a method for manufacturing a conductive plug in a semiconductor chip. Background technique [0002] In a semiconductor chip, it is often necessary to electrically connect a certain layer of metal to another layer of metal through conductive plugs. However, in the process of manufacturing conductive plugs, the conductive plugs often short-circuit with other conductive layers, especially for small-sized and highly integrated chips, it is even more difficult to manufacture conductive plugs with high aspect ratios. [0003] Combine the following Figure 1a-Figure 1d , to describe the manufacturing method of the conductive plug in the prior art. [0004] First, a substrate for manufacturing conductive plugs is provided. Referring to FIG. 1, the substrate includes: a first conductive layer 100, a passivation layer 101 on the first conductive layer 100, and a g...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 孙鹏黄永彬孙万峰
Owner SEMICON MFG INT (SHANGHAI) CORP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More