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Substrate for semiconductor device, method for producing the same, semiconductor device, and electronic apparatus

A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, circuits, etc., can solve the problems of violating resource saving and low cost, difficult to adapt separately, waste, etc.

Inactive Publication Date: 2011-05-18
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the gate insulating film and the interlayer insulating film are formed by patterning one insulating film formed on the entire surface of the substrate as disclosed in the above-mentioned Patent Document 1, the gate insulating film and the interlayer insulating film The material and film thickness will be limited to the same
Therefore, there is a technical problem that it is difficult to meet the specifications individually required for the gate insulating film and the interlayer insulating film.
In addition, according to the technology disclosed in the above-mentioned Patent Document 2, there is a technical problem that since the gate insulating film is formed by patterning one insulating film formed over the entire surface of the substrate, it is easy to be damaged due to a gap in the gate insulating film. The stress generated in the film during the formation process causes the substrate to deflect
In addition, there is also the following technical problem: it becomes wasteful to remove a part of the insulating film formed on the entire surface of the substrate when patterning, so it violates the requirements for resource saving and low cost.

Method used

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  • Substrate for semiconductor device, method for producing the same, semiconductor device, and electronic apparatus
  • Substrate for semiconductor device, method for producing the same, semiconductor device, and electronic apparatus
  • Substrate for semiconductor device, method for producing the same, semiconductor device, and electronic apparatus

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Experimental program
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no. 1 Embodiment approach

[0064] For the electrophoretic display panel of the first embodiment, refer to Figure 1 to Figure 5 Be explained.

[0065] First, regarding the overall structure of the electrophoretic display panel of this embodiment, refer to figure 1 and figure 2 Be explained.

[0066] figure 1 It is a block diagram showing the overall configuration of the electrophoretic display panel of the present embodiment.

[0067] exist figure 1 Among them, the electrophoretic display panel 1 of the present embodiment has a display portion 10 a in which pixels 60 in m rows×n columns are arranged in a matrix (two-dimensional plane). In the display portion 10a, m scanning lines 11 (ie, scanning lines Y1, Y2, . . . , Ym) and n data lines 6 (ie, data lines X1, X2, . The m scanning lines 11 extend in the row direction (ie, the X direction), and the n data lines 6 extend in the column direction (ie, the Y direction). The pixels 60 are arranged to correspond to the intersections of the m scanning l...

no. 2 Embodiment approach

[0121] Next, refer to Figure 6 as well as Figure 7 , the structure of the electrophoretic display panel of the second embodiment will be described. In addition, the electrophoretic display panel of the second embodiment basically has the same configuration as the electrophoretic display panel of the first embodiment described above. Therefore, it is appropriate to omit the description of the points that are the same as those of the above-mentioned first embodiment, and to focus on the points of difference.

[0122] Figure 6 It is an enlarged plan view of the display portion 10 a of the electrophoretic display panel 1 of the second embodiment. Figure 7 yes Figure 6 The B-B' line profile.

[0123] exist Figure 6 as well as Figure 7 Among them, the second embodiment is different from the above-mentioned embodiment in that the gate electrode is formed broadly over a region wider than the scanning line 11 (that is, including the gate electrode 30 b ) as viewed in a pl...

no. 3 Embodiment approach

[0127] Next, refer to Figure 8 as well as Figure 9 , the structure of the electrophoretic display panel of the third embodiment will be described. In addition, the outline of the electrophoretic display panel of the third embodiment basically has the same configuration as that of the electrophoretic display panel of the above-mentioned first embodiment. Therefore, it is appropriate to omit the description of the points that are the same as those of the above-mentioned first embodiment, and to focus on the points of difference.

[0128] Figure 8 It is an enlarged plan view of the display portion 10 a of the electrophoretic display panel 1 of the third embodiment. Figure 9 yes Figure 8 The C-C' line profile.

[0129] exist Figure 8 as well as Figure 9 In a planar view above the element substrate 10 , in the region where the interlayer insulating film 31 is formed, the gate insulating film 30 c is formed overlappingly on the upper layer side of the interlayer insula...

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Abstract

The invention provides a substrate for semiconductor device, a method for producing the same, a semiconductor device and an electronic apparatus. The substrate for the semiconductor device includes a substrate; a transistor disposed on the substrate and including a semiconductor layer, a first insulating film provided in the form of islands so as to at least partly overlap with the semiconductor layer in plan view on the substrate, and a gate electrode disposed so as to face the semiconductor layer with the first insulating film therebetween; and a second insulating film that is disposed on the substrate as substantially the same film as the first insulating film and that is formed in the form of islands so that at least one of the material and the thickness of the second insulating film is different from that of the first insulating film.

Description

technical field [0001] The present invention relates to the technical field of a substrate for a semiconductor device, a semiconductor device provided with the substrate for a semiconductor device, and an electronic device provided with the semiconductor device. Background technique [0002] As an example of such a substrate for a semiconductor device, there is an active matrix substrate used in a display device such as an electrophoretic display device of an active matrix driving method, and a pixel electrode is provided on the substrate for selecting the pixel electrode. Scanning lines, data lines, and thin film transistors (TFT: Thin Film Transistor) used as pixel switching elements are formed. In an active matrix substrate, for the purpose of increasing contrast, etc., a storage capacitor is sometimes provided between a TFT and a pixel electrode. The above constituent elements are formed on a substrate to form a laminated structure. An interlayer insulating film is for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L21/336H01L21/28
CPCH01L27/1255H01L27/1237
Inventor 佐藤尚
Owner SEIKO EPSON CORP