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Adjustable gap capacitively coupled rf plasma reactor including transverse bellows and non-contact particle seal

A plasma and bellows technology, applied in the direction of plasma, circuits, discharge tubes, etc., can solve the problems of large substrate size and small device features

Active Publication Date: 2014-10-29
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Smaller device features, larger substrate sizes and new processing techniques (multi-step processes such as dual damascene etch) increase the challenge of maintaining good uniformity across the wafer for better device yield

Method used

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  • Adjustable gap capacitively coupled rf plasma reactor including transverse bellows and non-contact particle seal
  • Adjustable gap capacitively coupled rf plasma reactor including transverse bellows and non-contact particle seal
  • Adjustable gap capacitively coupled rf plasma reactor including transverse bellows and non-contact particle seal

Examples

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Embodiment Construction

[0011] 1-1C illustrate an embodiment of an adjustable gap limited capacitively coupled RF plasma reactor 600 . As depicted, vacuum chamber 602 includes a chamber frame 604 housing a lower electrode 606 around a back volume. In the upper part of the chamber 602 , an upper electrode 608 is vertically spaced from the lower electrode 606 . The planes of the upper and lower electrodes 608, 606 are substantially parallel and normal to the vertical direction between the electrodes. Preferably, the upper and lower electrodes 608, 606 are circular and coaxial with the vertical axis. The lower surface of the upper electrode 608 faces the upper surface of the lower electrode 606 . The spaced apart, facing electrode surfaces define an adjustable gap 610 therebetween. In operation, the lower electrode 606 is supplied with RF power from an RF power supply (match) 620 . RF power is provided to the lower electrode 606 through RF supply tube 622 , RF strap 624 and RF power member 626 . A ...

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Abstract

A plasma processing chamber includes a cantilever assembly and at least one vacuum isolation member configured to neutralize atmospheric load. The chamber includes a wall surrounding an interior region and having an opening formed therein. A cantilever assembly includes a substrate support for supporting a substrate within the chamber. The cantilever assembly extends through the opening such that a portion is located outside the chamber. The chamber includes an actuation mechanism operative to move the cantilever assembly relative to the wall.

Description

[0001] Cross References to Related Applications [0002] This application claims priority to U.S. Provisional Patent Application 61 / 006,985, entitled "ADJUSTABLE GAP CAPACITIVELY COUPLED RF PLASMA REACTOR INCLUDING LATERAL BELLOWS AND NON-CONTACT PARTICLE SEAL," filed February 8, 2008, which is hereby incorporated by reference in its entirety content. Background technique [0003] Shrinking feature sizes and the realization of new materials in next-generation device fabrication place new demands on plasma processing equipment. Smaller device features, larger substrate sizes, and new processing techniques (multi-step processes, such as dual damascene etch) increase the challenge of maintaining good uniformity across the wafer for better device yield. Contents of the invention [0004] An embodiment of a plasma processing apparatus includes a chamber including a side wall surrounding an interior region and having an opening, a cantilever assembly including an arm unit extendi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H05H1/34
CPCH01J37/32568H01L21/6719H01J37/32091H01J37/32715H01L21/67069
Inventor 詹姆斯·E·塔潘斯科特·杰弗里·史蒂夫诺特
Owner LAM RES CORP